Datasheet > SI7117DN-T1-E3

SI7117DN-T1-E3

更新时间： 2024-11-07 12:28:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	561K
描述
P-Channel 150 V (D-S) MOSFET

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SI7117DN-T1-E3 数据手册

Si7117DN

Vishay Siliconix

P-Channel 150 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)

- 2.17

- 2.1

Q_g(Typ.)

Definition

•

TrenchFET^®Power MOSFETs

PowerPAK^®Package

- Low Thermal Resistance

- Low 1.07 mm Profile

1.2 at V_GS= - 10 V

1.3 at V_GS= - 6 V

- 150

7.7 nC

•

Compliant to RoHS Directive 2002/95/EC

PowerPAK 1212-8

APPLICATIONS

•

Active Clamp circiuts in DC/DC Power Supplies

3.30 mm

Bottom View

Ordering Information: Si7117DN-T1-E3 (Lead (Pb)-free)

Si7117DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

- 150

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 2.17^c

- 1.7

T_C= 25 °C

_C= 70 °C

_A= 25 °C

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

- 1.1^{a, b}

- 0.9^{a, b}

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

- 2.2

T_C= 25 °C

T_A= 25 °C

- 10.4

Continuous Source-Drain Diode Current^{a, b}

- 2.6^{a, b}

4.5

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L 0.1 mH

E_AS

1.01

12.5

T_C= 25 °C

_C= 70 °C

_A= 25 °C

Maximum Power Dissipation^{a, b}

P_D

3.2^{a, b}

2^{a, b}

- 55 to 150

260

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^c

°C

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 73478

S11-0648-Rev. C, 11-Apr-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

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SI7117DN-T1-E3 替代型号

型号	品牌	替代类型	描述	数据表
SI7117DN-T1-GE3	VISHAY	类似代替	P-Channel 150 V (D-S) MOSFET

与SI7117DN-T1-E3相关器件

型号	品牌	获取价格	描述	数据表
SI7117DN-T1-GE3	VISHAY	获取价格	P-Channel 150 V (D-S) MOSFET
SI7119DN	VISHAY	获取价格	P-Channel 200-V (D-S) MOSFET
SI7119DN (KI7119DN)	KEXIN	获取价格	P-Channel MOSFET
SI7119DN-T1-E3	VISHAY	获取价格	Trans MOSFET P-CH 200V 1.2A 8-Pin PowerPAK 1212 T/R
SI7119DN-T1-GE3	VISHAY	获取价格	Trans MOSFET P-CH 200V 1.2A 8-Pin PowerPAK 1212-8 T/R
SI7120ADN	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
SI7120ADN-T1-GE3	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
SI7120DN	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET
SI7120DN-T1-E3	VISHAY	获取价格	TRANSISTOR 6.3 A, 60 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS,
SI7120DN-T1-GE3	VISHAY	获取价格	TRANSISTOR 6.3 A, 60 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COM

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