Datasheet > Si7116BDN

Si7116BDN

更新时间： 2024-09-18 14:55:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	198K
描述
N-Channel 40 V (D-S) MOSFET

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Si7116BDN 数据手册

Si7116BDN

Vishay Siliconix

www.vishay.com

N-Channel 40 V (D-S) MOSFET

FEATURES

• TrenchFET^®Gen IV power MOSFET

PowerPAK^®1212-8PT

• Very low Q_gand Q_ossreduce power loss and

improve efficiency

• Optimized Q_g, Q_gd, and Q_gd/Q_gsratio reduces

switching related power loss

• 100 % R_gand UIS tested

3.3 mm

0.75 mm

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

3.3

Top View

Bottom View

APPLICATIONS

• Synchronous rectification

• Synchronous buck converter

• High power density DC/DC

PRODUCT SUMMARY

V_DS(V)

R_DS(on)max. () at V_GS= 10 V

0.0074

0.0096

14.2

R_DS(on)max. () at V_GS= 4.5 V

Q_gtyp. (nC)

• Load switching

N-Channel MOSFET

_D(A)

Configuration

Single

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

PowerPAK 1212-8PT

Si7116BDN-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

Continuous drain current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

18.4 ^{b, c}

14.7 ^{b, c}

100

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

4.5 ^{b, c}

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

I_AS

L = 0.1 mH

E_AS

_C= 25 °C

_C= 70 °C

62.5

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

5 ^{b, c}

3.2 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^c

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^b

SYMBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

t  10 s

Steady state

°C/W

Maximum junction-to-case (drain)

R_thJC

1.4

2.0

Notes

a. T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 60 °C/W

S20-0809-Rev. A, 19-Oct-2020

Document Number: 78973

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与Si7116BDN相关器件

型号	品牌	获取价格	描述	数据表
SI7116DN	VISHAY	获取价格	N-Channel 40-V (D-S) Fast Switching MOSFET
SI7116DN-T1-E3	VISHAY	获取价格	N-Channel 40-V (D-S) Fast Switching MOSFET
Si7117DN	VISHAY	获取价格	P-Channel 150 V (D-S) MOSFET
SI7117DN-T1-E3	VISHAY	获取价格	P-Channel 150 V (D-S) MOSFET
SI7117DN-T1-GE3	VISHAY	获取价格	P-Channel 150 V (D-S) MOSFET
SI7119DN	VISHAY	获取价格	P-Channel 200-V (D-S) MOSFET
SI7119DN (KI7119DN)	KEXIN	获取价格	P-Channel MOSFET
SI7119DN-T1-E3	VISHAY	获取价格	Trans MOSFET P-CH 200V 1.2A 8-Pin PowerPAK 1212 T/R
SI7119DN-T1-GE3	VISHAY	获取价格	Trans MOSFET P-CH 200V 1.2A 8-Pin PowerPAK 1212-8 T/R
SI7120ADN	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET

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