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SI6924EDQ-T1 PDF预览

SI6924EDQ-T1

更新时间： 2024-11-28 15:51:15
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
6页 72K
描述
Small Signal Field-Effect Transistor, 4.6A I(D), 28V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8

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SI6924EDQ-T1 技术参数

生命周期：Obsolete零件包装代码：TSSOP
包装说明：SMALL OUTLINE, R-PDSO-G8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.82配置：COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压：28 V最大漏极电流 (ID)：4.6 A
最大漏源导通电阻：0.033 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SI6924EDQ-T1 数据手册

 浏览型号SI6924EDQ-T1的Datasheet PDF文件第2页浏览型号SI6924EDQ-T1的Datasheet PDF文件第3页浏览型号SI6924EDQ-T1的Datasheet PDF文件第4页浏览型号SI6924EDQ-T1的Datasheet PDF文件第5页浏览型号SI6924EDQ-T1的Datasheet PDF文件第6页 
Si6924EDQ  
Vishay Siliconix  
N-Channel 2.5-V (G-S) Battery Switch, ESD Protection  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.033 @ V = 4.5 V  
GS  
"4.6  
"4.3  
"4.1  
ESD Protected  
2000 V  
0.038 @ V = 3.0 V  
GS  
28  
0.042 @ V = 2.5 V  
GS  
FEATURES  
D Low rDS(on)  
D rDS(on) Rating at 2.5-V VGS  
D 28-V VDS Rated  
D VGS Max Rating: 14 V  
D Exceeds 2-kV ESD Protection  
D Low Profile TSSOP-8 Package  
D Symetrical Voltage Blocking (Off Voltage)  
DESCRIPTION  
The Si6924EDQ is a dual n-channel MOSFET with ESD  
protection and gate over-voltage protection circuitry  
incorporated into the MOSFET. The device is designed for use  
in Lithium Ion battery pack circuits. The common-drain  
contsruction takes advantage of the typical battery pack  
topology, allowing a further reduction of the device’s  
on-resistance. The 2-stage input protection circuit is a unique  
design, consisting of two stages of back-to-back zener diodes  
separated by a resistor. The first stage diode is designed to  
absorb most of the ESD energy. The second stage diode is  
designed to protect the gate from any remaining ESD energy  
and over-voltages above the gates inherent safe operating  
range. The series resistor used to limit the current through the  
second stage diode during over voltage conditions has a  
maximum value which limits the input current to v 10 mA @  
14 V and the maximum toff to 12 ms. The Si6924EDQ has been  
optimized as a battery or load switch in Lithium Ion applications  
with the advantage of both a 2.5-V rDS(on) rating and a safe  
14-V gate-to-source maximum rating.  
APPLICATION CIRCUITS  
D
ESD and  
Overvoltage  
Protection  
ESD and  
Overvoltage  
Protection  
R**  
G
S
**R typical value is 1.8 kW by design.  
Battery Protection Circuit  
See Typical Characteristics,  
Gate-Current vs. Gate-Source Voltage, Page 3.  
*Thermal connection to drain pins is required to achieve specific performance.  
FIGURE 1. Typical Use In a Lithium Ion Battery Pack  
FIGURE 2. Input ESD and Overvoltage Protection  
Circuit.  
Document Number: 70814  
S-59522—Rev. C, 30-Nov-98  
www.vishay.com  
1
123456

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