Datasheet > SI6923DQ

SI6923DQ

更新时间： 2024-11-27 22:20:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		肖特基二极管
页数	文件大小	规格书
5页	93K
描述
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI6923DQ 数据手册

April 2001

Si6923DQ

P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode

General Description

Features

This P-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild Semiconductor’s advanced

PowerTrench process. It is combined with a low

forward drop Schottky diode which is isolated from the

MOSFET, providing a compact power solution for

asynchronous DC/DC converter applications.

• –3.5 A, –20 V. R_DS(ON)= 0.045 Ω @ V_GS= –4.5 V

R_DS(ON)= 0.075 Ω @ V_GS= –2.5 V

• V < 0.55 V @ 1 A

• High performance trench technology for extremely

Applications

low R_DS(ON)

• DC/DC conversion

• Low profile TSSOP-8 package

TSSOP-8

Pin 1

MOSFET Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

–20

Units

V_GSS

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

± 12

I_D

(Note 1)

–3.5

–30

MOSFET Power Dissipation (minimum pad)

Schottky Power Dissipation (minimum pad)

(Note 1)

1.2

1.0

P_D

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Schottky Maximum Ratings

V_RRM

Repetitive Peak Reverse Voltage

Average Forward Current

Peak Forward Current

1.5

I_F

I_FM

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(minimum pad)

MOSFET: 115

Schottky: 130

R_θJA

°C/W

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

6923

Si6923DQ

13’’

16mm

3000 units

Si6923DQ Rev. A(W)

2001 Fairchild Semiconductor Corporation

12 3 4 5

中文翻译

下载PDF

与SI6923DQ相关器件

型号	品牌	获取价格	描述	数据表
SI6923DQ-E3	VISHAY	获取价格	TRANSISTOR 3500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpos
SI6923DQ-T1-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
SI6923DQ-T1-GE3	VISHAY	获取价格	TRANSISTOR 3500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSSOP-8, FE
SI6924AEDQ	VISHAY	获取价格	N-Channel 2.5-V (G-S) Battery Switch, ESD Protection
SI6924AEDQ_08	VISHAY	获取价格	N-Channel 2.5-V (G-S) Battery Switch, ESD Protection
SI6924AEDQ-T1	VISHAY	获取价格	N-Channel 2.5-V (G-S) Battery Switch, ESD Protection
SI6924AEDQ-T1-E3	VISHAY	获取价格	TRANSISTOR 4100 mA, 28 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET Gen
SI6924AEDQ-T1-GE3	VISHAY	获取价格	N-Channel 2.5-V (G-S) Battery Switch, ESD Protection
SI6924EDQ	VISHAY	获取价格	N-Channel 2.5-V (G-S) Battery Switch, ESD Protection
SI6924EDQ-T1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 4.6A I(D), 28V, 2-Element, N-Channel, Silicon, Metal