Datasheet > SI6911DQ

SI6911DQ

更新时间： 2024-11-27 22:33:55

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威世 - VISHAY		/
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5页	45K
描述
Dual P-Channel 12-V (D-S) MOSFET

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SI6911DQ 数据手册

Si6911DQ

Vishay Siliconix

New Product

Dual P-Channel 12-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFETS

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

D Load Switch

0.026 @ V = -4.5 V

-5.1

-4.5

-3.9

D Battery Switch

0.035 @ V = -2.5 V

-12

0.046 @ V = -1.8 V

TSSOP-8

Top View

Ordering Information: Si6911DQ T-1

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-12

= 25_C

= 70_C

-5.1

-4.1

-4.3

-3.5

Continuous Drain Current (T = 150__C)

Pulsed Drain Current (10 ms Pulse Width)

-30

Continuous Source Current (Diode Conduction)

-1.0

1.14

0.73

-0.7

0.83

0.53

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

124

110

150

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72231

S-31064—Rev. A, 26-May-03

www.vishay.com

12 3 4 5

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