Datasheet > SI6880AEDQ_06

SI6880AEDQ_06

更新时间： 2024-11-25 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		电池开关
页数	文件大小	规格书
4页	100K
描述
N-Channel 1.8-V (G-S) Battery Switch with ESD Protection

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SI6880AEDQ_06 数据手册

Si6880AEDQ

Vishay Siliconix

New Product

N-Channel 1.8-V (G-S) Battery Switch, ESD Protection

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

ESD Protected: 3500 V

Common Drain

V_DS(V)

r_DS(on)(Ω)

I_D(A)

7.2

Pb-free

0.018 at V_GS= 4.5 V

0.022 at V_GS= 2.5 V

0.025 at V_GS= 1.8 V

Available

RoHS*

6.5

COMPLIANT

APPLICATIONS

6.0

•

1-2 Cell Battery Protection Circuitry

TSSOP-8

* 2.3 kΩ

Si6880AEDQ

Top View

Ordering Information: Si6880AEDQ-T1

Si6880AEDQ-T1-E3 (Lead (Pb)-free)

N-Channel

* Typical value by design

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 sec

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

7.2

5.7

5.8

4.7

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source Current (Diode Conduction)^a

1.5

1.0

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation^a

P_D

0.96

0.64

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 sec

Steady State

120

Maximum Junction-to-Ambient^a

R_thJA

100

°C/W

Maximum Junction-to-Foot (Drain)^a

R_thJF

Notes:

a. Surface Mounted on FR4 Board.

b. t ≤ 10 sec.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72313

S-60422-Rev. B, 20-Mar-06

www.vishay.com

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