生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 2.11 | Is Samacsys: | N |
电容: | 680 µF | 电容器类型: | ALUMINUM ELECTROLYTIC CAPACITOR |
自定义功能: | Consult Factory | 介电材料: | ALUMINUM (WET) |
负容差: | 20% | 端子数量: | 2 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
封装形式: | Radial | 极性: | POLARIZED |
正容差: | 20% | 额定(直流)电压(URdc): | 200 V |
端子节距: | 10 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI680M25 | NTE |
获取价格 |
SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | |
SI680M250 | NTE |
获取价格 |
SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | |
SI680M35 | NTE |
获取价格 |
SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | |
SI680M450 | NTE |
获取价格 |
SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | |
SI680M50 | NTE |
获取价格 |
SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | |
SI680M63 | NTE |
获取价格 |
SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | |
SI680M80 | NTE |
获取价格 |
SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | |
SI6820DQ | VISHAY |
获取价格 |
N-Channel, Reduced Qg, MOSFET with Schottky Diode | |
SI6820DQ-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI6820DQ-T1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal |