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SI5443DC-T1-E3 PDF预览

SI5443DC-T1-E3

更新时间: 2024-11-05 22:58:51
品牌 Logo 应用领域
威世 - VISHAY 晶体管
页数 文件大小 规格书
5页 85K
描述
MOSFET P-CH 20V 3.6A 1206-8

SI5443DC-T1-E3 技术参数

是否无铅: 不含铅生命周期:Obsolete
包装说明:SMALL OUTLINE, R-XDSO-C8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):3.6 A
最大漏极电流 (ID):3.6 A最大漏源导通电阻:0.065 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XDSO-C8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON

SI5443DC-T1-E3 数据手册

 浏览型号SI5443DC-T1-E3的Datasheet PDF文件第2页浏览型号SI5443DC-T1-E3的Datasheet PDF文件第3页浏览型号SI5443DC-T1-E3的Datasheet PDF文件第4页浏览型号SI5443DC-T1-E3的Datasheet PDF文件第5页 
Si5443DC  
Vishay Siliconix  
P-Channel 2.5-V (G-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
4.9  
Available  
0.065 at VGS = - 4.5 V  
0.074 at VGS = - 3.6 V  
0.110 at VGS = - 2.5 V  
TrenchFET® Power MOSFETs: 2.5 V Rated  
- 20  
4.6  
3.ꢀ  
1206-8 ChipFET®  
S
1
D
D
D
D
G
D
Marking Code  
D
G
BB XX  
Lot Traceability  
and Date Code  
S
Part # Code  
Bottom View  
D
Ordering Information: Si5443DC-T1-E3 (Lead-(Pb)-free)  
Si5443DC-T1-GE3 (Lead-(Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
5 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 20  
12  
V
VGS  
TA = 25 °C  
A = ꢀ5 °C  
4.9  
3.6  
2.6  
15  
Continuous Drain Current (TJ = 150 °C)a  
ID  
T
3.5  
A
IDM  
IAS  
Pulsed Drain Current  
Continuous Source Currenta  
- 2.1  
2.5  
- 1.1  
1.3  
0.7  
TA = 25 °C  
TA = ꢀ5 °C  
Maximum Power Dissipationa  
PD  
W
1.3  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)b, c  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
40  
Maximum  
Unit  
t 5 s  
50  
95  
20  
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
ꢀ0  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
15  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result  
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure  
adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 71064  
S09-0129-Rev. D, 02-Feb-09  
www.vishay.com  
1

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