Datasheet > SI4712DY

SI4712DY

更新时间： 2024-09-16 09:26:03

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
10页	246K
描述
N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Si4712DY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

PRODUCT SUMMARY

V_DS(V)

R_DS(on)(Ω)

I_D(A)^a

Q_g(Typ.)

•

Halogen-free According to IEC 61249-2-21

Definition

0.013 at V_GS= 10 V

0.0165 at V_GS= 4.5 V

14.6

12.9

8.3 nC

•

SkyFET^®Monolithic TrenchFET^®Power

MOSFET and Schottky Diode

100 % R_gTested

•

100 % UIS Tested

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Notebook System Power

- Low Side

SO-8

Schottky Diode

Top View

Si4712DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

Ordering Information:

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

_C= 25 °C

T_C= 70 °C

_A= 25 °C

14.6

11.6

10.3^{b, c}

Continuous Drain Current (T_J= 150 °C)

I_D

8.2^{b, c}

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

4.5

2.3^{b, c}

Continuous Source-Drain Diode Current

_A= 25 °C

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

11.25

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

3.2

P_D

Maximum Power Dissipation

2.5^{b, c}

1.6^{b, c}

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

R_thJF

Typ.

Max.

Unit

t ≤ 10 s

Steady State

°C/W

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

Document Number: 65170

S09-1814-Rev. A, 14-Sep-09

www.vishay.com

12 3 4 5 6 7...10

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