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SI4435FDY-T1-GE3 PDF预览

SI4435FDY-T1-GE3

更新时间: 2024-11-06 20:02:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 187K
描述
Small Signal Field-Effect Transistor,

SI4435FDY-T1-GE3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:12 weeks风险等级:5.63
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SI4435FDY-T1-GE3 数据手册

 浏览型号SI4435FDY-T1-GE3的Datasheet PDF文件第2页浏览型号SI4435FDY-T1-GE3的Datasheet PDF文件第3页浏览型号SI4435FDY-T1-GE3的Datasheet PDF文件第4页浏览型号SI4435FDY-T1-GE3的Datasheet PDF文件第5页浏览型号SI4435FDY-T1-GE3的Datasheet PDF文件第6页浏览型号SI4435FDY-T1-GE3的Datasheet PDF文件第7页 
Si4435FDY  
Vishay Siliconix  
www.vishay.com  
P-Channel 30 V (D-S) MOSFET  
FEATURES  
• TrenchFET® Gen III p-channel power MOSFET  
SO-8 Single  
D
5
D
6
• 100% Rg tested  
D
7
D
8
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
4
G
APPLICATIONS  
• Adapter switch  
• Load switch  
S
3
S
2
S
1
S
Top View  
• DC/DC converters  
G
• High speed switching  
PRODUCT SUMMARY  
VDS (V)  
-30  
• Power  
management  
in  
RDS(on) max. () at VGS = -10 V  
0.019  
0.030  
13.5  
battery-operated, mobile and  
wearable devices  
P-Channel MOSFET  
RDS(on) max. () at VGS = -4.5 V  
D
Qg typ. (nC)  
ID (A) a  
-12.6 e  
Configuration  
Single  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
SO-8  
Si4435FDY-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
-30  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
20  
T
C = 25 °C  
-12.6 e  
-10 a  
-8.6 b, c  
-6.9 b, c  
-32 a  
TC = 70 °C  
TA =25 °C  
TA = 70 °C  
Continuous drain current (TJ = 150 °C)  
ID  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
-4  
-1.9 b, c  
Continuous source-drain diode current  
TA = 70 °C  
T
C = 25 °C  
C = 70 °C  
4.8  
T
3.1  
Maximum power dissipation  
PD  
W
TA = 25 °C  
TA = 70 °C  
2.2 b, c  
1.4 b, c  
-55 to +150  
260  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d, e  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction-to-ambient b, d  
SYMBOL  
RthJA  
TYPICAL  
MAXIMUM  
UNIT  
t 10 s  
Steady state  
45  
20  
56  
26  
°C/W  
Maximum junction-to-case (drain)  
Notes  
RthJF  
a. Package limited  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. Maximum under steady state conditions is 100 °C/W  
e. TC = 25 °C  
S17-0342-Rev. A, 06-Mar-17  
Document Number: 75339  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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