Si4435FDY
Vishay Siliconix
www.vishay.com
P-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET® Gen III p-channel power MOSFET
SO-8 Single
D
5
D
6
• 100% Rg tested
D
7
D
8
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
4
G
APPLICATIONS
• Adapter switch
• Load switch
S
3
S
2
S
Top View
• DC/DC converters
G
• High speed switching
PRODUCT SUMMARY
VDS (V)
-30
• Power
management
in
RDS(on) max. () at VGS = -10 V
0.019
0.030
13.5
battery-operated, mobile and
wearable devices
P-Channel MOSFET
RDS(on) max. () at VGS = -4.5 V
D
Qg typ. (nC)
ID (A) a
-12.6 e
Configuration
Single
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
SO-8
Si4435FDY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-30
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
T
C = 25 °C
-12.6 e
-10 a
-8.6 b, c
-6.9 b, c
-32 a
TC = 70 °C
TA =25 °C
TA = 70 °C
Continuous drain current (TJ = 150 °C)
ID
A
Pulsed drain current (t = 100 μs)
IDM
IS
TC = 25 °C
-4
-1.9 b, c
Continuous source-drain diode current
TA = 70 °C
T
C = 25 °C
C = 70 °C
4.8
T
3.1
Maximum power dissipation
PD
W
TA = 25 °C
TA = 70 °C
2.2 b, c
1.4 b, c
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b, d
SYMBOL
RthJA
TYPICAL
MAXIMUM
UNIT
t 10 s
Steady state
45
20
56
26
°C/W
Maximum junction-to-case (drain)
Notes
RthJF
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. Maximum under steady state conditions is 100 °C/W
e. TC = 25 °C
S17-0342-Rev. A, 06-Mar-17
Document Number: 75339
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000