Datasheet > Si4435FDY

Si4435FDY

更新时间： 2024-09-17 14:54:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	186K
描述
P-Channel 30 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

Si4435FDY 数据手册

Si4435FDY

Vishay Siliconix

www.vishay.com

P-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET^®Gen III p-channel power MOSFET

SO-8 Single

• 100% R_gtested

• Material categorization: 

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Adapter switch

• Load switch

Top View

• DC/DC converters

• High speed switching

PRODUCT SUMMARY

V_DS(V)

-30

• Power

management

R_DS(on)max. () at V_GS= -10 V

0.019

0.030

13.5

battery-operated, mobile and

wearable devices

P-Channel MOSFET

R_DS(on)max. () at V_GS= -4.5 V

Q_gtyp. (nC)

I_D(A) ^a

-12.6 ^e

Configuration

Single

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

SO-8

Si4435FDY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-30

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

-12.6 ^e

-10 ^a

-8.6 ^{b, c}

-6.9 ^{b, c}

-32 ^a

T_C= 70 °C

T_A=25 °C

T_A= 70 °C

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

-4

-1.9 ^{b, c}

Continuous source-drain diode current

T_A= 70 °C

_C= 25 °C

_C= 70 °C

4.8

3.1

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

2.2 ^{b, c}

1.4 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, d}

SYMBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

t  10 s

Steady state

°C/W

Maximum junction-to-case (drain)

Notes

R_thJF

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. Maximum under steady state conditions is 100 °C/W

e. T_C= 25 °C

S17-0342-Rev. A, 06-Mar-17

Document Number: 75339

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

下载PDF

与Si4435FDY相关器件

型号	品牌	获取价格	描述	数据表
SI4435FDY-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor,
SI4436DY	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET
SI4436DY	INTERSIL	获取价格	ISL6844 Reference Design: ISL6844EVAL3Z
SI4436DY-T1-E3	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET
SI4436DY-T1-GE3	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET
Si4438	SILICON	获取价格	Low active power consumption
SI4438-C	SILICON	获取价格	Low active power consumption
SI4438-C2A-GM	SILICON	获取价格	Telecom Circuit, 1-Func, LEAD FREE, MO-220VGGD-8, QFN-20
SI4438-C2A-GMR	SILICON	获取价格	Telecom Circuit, 1-Func, LEAD FREE, MO-220VGGD-8, QFN-20
SI4438DY-T1-GE3	VISHAY	获取价格	N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel