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SI4435DYPBF

更新时间: 2024-11-06 03:10:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 108K
描述
HEXFET Power MOSFET

SI4435DYPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, SOP-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.24
Is Samacsys:N其他特性:ULTRA LOW RESISTANCE
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):8 A最大漏极电流 (ID):8 A
最大漏源导通电阻:0.02 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2.5 W
最大脉冲漏极电流 (IDM):50 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI4435DYPBF 数据手册

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PD- 95133  
Si4435DYPbF  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l P-Channel MOSFET  
l Surface Mount  
l Available in Tape & Reel  
l Lead-Free  
A
1
2
3
4
8
D
S
S
VDSS = -30V  
7
D
6
S
G
D
5
D
RDS(on) = 0.020Ω  
Top View  
Description  
These P-channel HEXFET® Power MOSFETs from  
International Rectifier utilize advanced processing  
techniques to achieve the extremely low on-resistance per  
silicon area. This benefit provides the designer with an  
extremely efficient device for use in battery and load  
management applications..  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of power  
applications. With these improvements, multiple devices  
can be used in an application with dramatically reduced  
board space. The package is designed for vapor phase,  
infrared, or wave soldering techniques.  
SO-8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain- Source Voltage  
-30  
V
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current   
-8.0  
-6.4  
A
-50  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation  
2.5  
W
Power Dissipation  
1.6  
Linear Derating Factor  
0.02  
W/°C  
V
VGS  
Gate-to-Source Voltage  
± 20  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambientƒ  
Max.  
50  
Units  
°C/W  
RθJA  
www.irf.com  
1
09/30/04  

SI4435DYPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF7101TRPBF INFINEON

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Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta
SI4435DYTRPBF INFINEON

类似代替

Power Field-Effect Transistor,
IRF7416PBF INFINEON

类似代替

HEXFET Power MOSFET

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