Datasheet > SI4435DY-T1-REVA

SI4435DY-T1-REVA

更新时间： 2024-11-06 18:43:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	78K
描述
Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SI4435DY-T1-REVA 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.81
Base Number Matches：	1

SI4435DY-T1-REVA 数据手册

Si4435DY

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

Lead (Pb)-Free Version is RoHS

Compliant

V_DS(V)

r_DS(on)(W)

I_D(A)

0.02 @ V = –10 V

–8.0

–6.0

–30

0.035 @ V = –4.5 V

SO-8

Top View

P-Channel MOSFET

Ordering Information: Si4435DY-T1–REV A

Si4435DY-T1–A–E3 (Lead (Pb)-Free)

ABSOLUTE MAXIMUM RATINGS (T = 25 UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

–30

"20

–8.0

= 25 C

= 70 C

Continuous Drain Current (T = 150 C)

–6.4

Pulsed Drain Current

–50

Continuous Source Current (Diode Conduction)

–2.1

= 25 C

= 70 C

2.5

Maximum Power Dissipation

1.6

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambient

thJA

C/W

Notes

a. Surface Mounted on FR4 Board, t v 10 sec.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70149

S-51472—Rev. G, 01-Aug-05

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与SI4435DY-T1-REVA相关器件

型号	品牌	获取价格	描述	数据表
SI4435DYTRPBF	INFINEON	获取价格	Power Field-Effect Transistor,
Si4435FDY	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SI4435FDY-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor,
SI4436DY	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET
SI4436DY	INTERSIL	获取价格	ISL6844 Reference Design: ISL6844EVAL3Z
SI4436DY-T1-E3	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET
SI4436DY-T1-GE3	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET
Si4438	SILICON	获取价格	Low active power consumption
SI4438-C	SILICON	获取价格	Low active power consumption
SI4438-C2A-GM	SILICON	获取价格	Telecom Circuit, 1-Func, LEAD FREE, MO-220VGGD-8, QFN-20