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SI4435DY (KI4435DY) PDF预览

SI4435DY (KI4435DY)

更新时间: 2024-11-24 18:06:23
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
4页 390K
描述
P-Channel MOSFET

SI4435DY (KI4435DY) 数据手册

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SMD Type  
MOSFET  
P-Channel MOSFET  
SI4435DY (KI4435DY)  
SOP-8  
Features  
VDS=-30V  
RDS(on)=0.02Ω@VGS=-10V  
RDS(on)=0.035Ω@VGS=-4.5V  
0.15  
1.50  
S
S
S
S
D
D
D
D
1
2
3
4
8
7
6
5
G
G
D
Top View  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
VGS  
ID  
Rating  
-30  
Unit  
V
Gate-Source Voltage  
±20  
-8.8  
-50  
-15  
16  
Continuous Drain Current  
Pulsed Drain Current  
IDM  
A
Avalanche Current with Single Pulse(L=0.1mH)  
Avalanche Energy with Single Pulse(L=0.1mH)  
Maximum Power Dissipation  
Maximum Junction-to-Ambient  
IAS  
EAS  
mJ  
W
PD  
2.5  
50  
RthJA  
TJ, Tstg  
/W  
Operating Junction and Storage Temperature Range  
-55 to 150  
1
www.kexin.com.cn  

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ISL6844 Reference Design: ISL6844EVAL3Z