生命周期: | Obsolete | 零件包装代码: | DFN |
包装说明: | HVQCCN, | 针数: | 28 |
Reach Compliance Code: | unknown | HTS代码: | 8542.39.00.01 |
风险等级: | 5.7 | 模拟集成电路 - 其他类型: | PHASE LOCKED LOOP |
JESD-30 代码: | S-XQCC-N28 | 长度: | 5 mm |
功能数量: | 1 | 端子数量: | 28 |
最高工作温度: | 85 °C | 最低工作温度: | -20 °C |
封装主体材料: | UNSPECIFIED | 封装代码: | HVQCCN |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
认证状态: | Not Qualified | 座面最大高度: | 0.9 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
温度等级: | OTHER | 端子形式: | NO LEAD |
端子节距: | 0.5 mm | 端子位置: | QUAD |
宽度: | 5 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4122G-BT | SILICON |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS | |
SI4122G-BT* | ETC |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS | |
SI4123 | SILICON |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | |
SI4123-BM | ETC |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | |
SI4123-BT | ETC |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | |
SI4123-D-GM | SILICON |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | |
SI4123-D-GMR | SILICON |
获取价格 |
RF and Baseband Circuit, ROHS COMPLIANT, MS-220VHHD-1, QFN-28 | |
SI4123-D-GT | SILICON |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | |
SI4123G | SILICON |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS | |
SI4123G-BM | SILICON |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS |