Si4062DY
Vishay Siliconix
www.vishay.com
N-Channel 60 V (D-S) MOSFET
FEATURES
SO-8 Single
D
5
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
D
6
D
7
D
8
For definitions of compliance please see
www.vishay.com/doc?99912
4
G
3
S
APPLICATIONS
2
D
S
• DC/DC primary side switch
• Industrial
Top View
• Synchronous rectification
PRODUCT SUMMARY
VDS (V)
60
• Load switch
G
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 6 V
RDS(on) max. () at VGS = 4.5 V
0.0042
0.0054
0.0069
18.8
• DC/DC converters
• DC/AC inverters
S
Qg typ. (nC)
D (A) a
Configuration
I
32.1
N-Channel MOSFET
Single
ORDERING INFORMATION
Package
SO-8
Lead (Pb)-free and halogen-free
Si4062DY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
60
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
T
C = 25 °C
C = 70 °C
32.1
T
25.7
Continuous drain current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
21.5 b, c
17 b, c
150
A
Pulsed drain current (t = 100 μs)
IDM
IS
TC = 25 °C
7
Continuous source-drain diode current
TA = 25 °C
3.1 b, c
Single pulse avalanche current
Avalanche energy
IAS
25
L = 0.1 mH
EAS
31.2
mJ
W
T
C = 25 °C
C = 70 °C
7.8
T
5
Maximum power dissipation
PD
TA = 25 °C
TA = 70 °C
3.5 b, c
2.2 b, c
-55 to +150
Operating junction and storage temperature range
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient b, d
t 10 s
Steady state
RthJA
RthJF
29
13
35
16
°C/W
Maximum junction-to-foot (drain)
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. Maximum under steady state conditions is 80 °C/W
S13-1383-Rev. A, 17-Jun-13
Document Number: 62857
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000