Datasheet > Si4038DY

Si4038DY

更新时间： 2023-12-06 20:02:12

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威世 - VISHAY		/
页数	文件大小	规格书
9页	189K
描述
N-Channel 40 V (D-S) MOSFET

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Si4038DY 数据手册

Si4038DY

Vishay Siliconix

N-Channel 40 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

V_DS(V)

R_DS(on)() Max.

0.0024 at V_GS= 10 V

0.0032 at V_GS= 4.5 V

I_D(A)^a

42.5

Q_g(Typ.)

100 % R_gand UIS Tested

Material categorization:

28 nC

For definitions of compliance please see

www.vishay.com/doc?99912

36.8

SO-8

APPLICATIONS

•

Synchronous Rectification

DC/DC Converters

DC/AC Inverters

Industrial

Top View

Ordering Information:

Si4038DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

42.5

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

28.4^{b, c}

22.4^{b, c}

150

I_DM

I_S

Pulsed Drain Current (t = 100 µs)

T_C= 25 °C

Continuous Source-Drain Diode Current

3.1^{b, c}

T_A= 25 °C

I_AS

Single Pulse Avalanche Current

Avalanche Energy

L = 0.1 mH

E_AS

_C= 25 °C

7.8

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation

P_D

3.5^{b, c}

2.2^{b, c}

- 55 to 150

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typical

Maximum

Unit

t  10 s

Steady State

R_thJA

R_thJF

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 80 °C/W.

Document Number: 62904

S13-2180-Rev. A, 14-Oct-13

For technical questions, contact: pmostechsupport@vishay.com

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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