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SI3911DV-T1-GE3 PDF预览

SI3911DV-T1-GE3

更新时间: 2024-11-21 15:51:11
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
9页 200K
描述
TRANSISTOR 1800 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal

SI3911DV-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.74配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):1.8 A
最大漏极电流 (ID):1.8 A最大漏源导通电阻:0.145 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:PURE MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管元件材料:SILICON
Base Number Matches:1

SI3911DV-T1-GE3 数据手册

 浏览型号SI3911DV-T1-GE3的Datasheet PDF文件第2页浏览型号SI3911DV-T1-GE3的Datasheet PDF文件第3页浏览型号SI3911DV-T1-GE3的Datasheet PDF文件第4页浏览型号SI3911DV-T1-GE3的Datasheet PDF文件第5页浏览型号SI3911DV-T1-GE3的Datasheet PDF文件第6页浏览型号SI3911DV-T1-GE3的Datasheet PDF文件第7页 
Si3911DV  
Vishay Siliconix  
Dual P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 2.2  
- 1.8  
- 1.5  
Definition  
0.145 at VGS = - 4.5 V  
0.200 at VGS = - 2.5 V  
0.300 at VGS = - 1.8 V  
TrenchFET® Power MOSFETs: 1.8 V Rated  
Compliant to RoHS Directive 2002/95/EC  
- 20  
TSOP-6  
Top View  
S
S
2
1
G1  
D1  
S1  
D2  
1
2
3
6
5
G
1
G
2
3 mm  
S2  
G2  
4
2.85 mm  
D
1
D
2
Ordering Information: Si3911DV-T1-E3 (Lead (Pb)-free)  
Si3911DV-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
5 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 20  
8
V
VGS  
TA = 25 °C  
TA = 70 °C  
- 2.2  
- 1.8  
- 1.8  
- 1.5  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
Pulsed Drain Current  
8
Continuous Diode Current (Diode Conduction)a  
- 1.05  
1.15  
- 0.75  
0.83  
TA = 25 °C  
Maximum Power Dissipationa  
PD  
W
TA = 70 °C  
0.73  
0.53  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
93  
Maximum  
110  
Unit  
t 5 s  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
RthJA  
Steady State  
Steady State  
130  
90  
150  
°C/W  
RthJF  
90  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
Document Number: 71380  
S09-2276-Rev. C, 02-Nov-09  
www.vishay.com  
1

SI3911DV-T1-GE3 替代型号

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