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SI3911DV PDF预览

SI3911DV

更新时间: 2024-11-20 22:33:51
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
4页 48K
描述
Dual P-Channel 20-V (D-S) MOSFET

SI3911DV 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.87Is Samacsys:N
最大漏极电流 (Abs) (ID):1.8 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.83 W子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

SI3911DV 数据手册

 浏览型号SI3911DV的Datasheet PDF文件第2页浏览型号SI3911DV的Datasheet PDF文件第3页浏览型号SI3911DV的Datasheet PDF文件第4页 
Si3911DV  
Vishay Siliconix  
New Product  
Dual P-Channel 20-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.145 @ V = –4.5 V  
–2.2  
–1.8  
–1.5  
GS  
–20  
0.200 @ V = –2.5  
V
V
GS  
0.300 @ V = –1.8  
GS  
S
S
2
1
TSOP-6  
Top View  
G1  
S2  
G2  
D1  
S1  
D2  
1
2
3
6
5
G
1
G
2
3 mm  
4
D
1
D
2
2.85 mm  
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
–20  
DS  
GS  
V
V
"8  
T
= 25_C  
= 70_C  
–1.8  
–1.5  
–2.2  
–1.8  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
DM  
"8  
a
Continuous Diode Current (Diode Conduction)  
I
–1.05  
1.15  
0.73  
–0.75  
0.83  
0.53  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
Steady State  
Steady State  
93  
130  
90  
110  
150  
90  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71380  
S-20275—Rev. B, 18-Mar-02  
www.vishay.com  
1

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