Datasheet > Si3483DDV

Si3483DDV

更新时间： 2024-11-10 14:53:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	300K
描述
P-Channel 30 V (D-S) MOSFET

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Si3483DDV 数据手册

Si3483DDV

Vishay Siliconix

www.vishay.com

P-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET^®Gen IV p-channel power MOSFET

TSOP-6 Single

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Load switch

Top View

Marking code: BT

PRODUCT SUMMARY

V_DS(V)

-30

0.0312

0.0513

4.5

_DS(on)max. () at V_GS= -10 V

_DS(on)max. () at V_GS= -4.5 V

Q_gtyp. (nC)

_D(A) ^{a, d}

-8

P-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

TSOP-6

Lead (Pb)-free and halogen-free

Si3483DDV-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-30

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

-20 / +16

-8 ^a

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

-6.4

Continuous drain current (T_J= 150 °C)

I_D

-6.4 ^{b, c}

-5.2 ^{b, c}

-30

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

-2.5

-1.67 ^{b, c}

Continuous source-drain diode current

T_A= 25 °C

_C= 25 °C

_C= 70 °C

2 ^{b, c}

1.3 ^{b, c}

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

Operating junction and storage temperature range

T_J, T_stg

-55 to +150

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^b

SYMBOL

R_thJA

TYPICAL

MAXIMUM

62.5

UNIT

t  5 s

°C/W

Maximum junction-to-case (drain)

Steady state

R_thJC

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 5 s

d. Maximum under steady state conditions is 110 °C/W

S19-0383-Rev. A, 29-Apr-2019

Document Number: 76252

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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