是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 零件包装代码: | TSOP |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 7.11 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 8 A |
最大漏极电流 (ID): | 6.1 A | 最大漏源导通电阻: | 0.034 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 4.2 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Pure Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
Si3483DDV | VISHAY |
获取价格 |
P-Channel 30 V (D-S) MOSFET | |
SI3483DV | VISHAY |
获取价格 |
P-Channel 30-V (D-S) MOSFET | |
SI3483DV-E3 | VISHAY |
获取价格 |
TRANSISTOR 4700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose | |
SI3483DV-T1-E3 | VISHAY |
获取价格 |
P-Channel 30-V (D-S) MOSFET | |
SI3483DV-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 4700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL | |
SI3491DV-T1 | VISHAY |
获取价格 |
TRANSISTOR 4200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose | |
SI3491DV-T1-E3 | VISHAY |
获取价格 |
Trans MOSFET P-CH 20V 4.2A 6-Pin TSOP T/R | |
SI3493BDV | VISHAY |
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P-Channel 20-V (D-S) MOSFET | |
SI3493BDV-T1-E3 | VISHAY |
获取价格 |
P-Channel 20-V (D-S) MOSFET | |
SI3493BDV-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 8000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL |