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SI3483CDV-T1-E3 PDF预览

SI3483CDV-T1-E3

更新时间: 2024-09-30 06:11:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 138K
描述
P-Channel 30-V (D-S) MOSFET

SI3483CDV-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TSOP
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:7.11配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):8 A
最大漏极电流 (ID):6.1 A最大漏源导通电阻:0.034 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):4.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Pure Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI3483CDV-T1-E3 数据手册

 浏览型号SI3483CDV-T1-E3的Datasheet PDF文件第2页浏览型号SI3483CDV-T1-E3的Datasheet PDF文件第3页浏览型号SI3483CDV-T1-E3的Datasheet PDF文件第4页浏览型号SI3483CDV-T1-E3的Datasheet PDF文件第5页浏览型号SI3483CDV-T1-E3的Datasheet PDF文件第6页浏览型号SI3483CDV-T1-E3的Datasheet PDF文件第7页 
New Product  
Si3483CDV  
Vishay Siliconix  
P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)  
- 8a  
- 7  
0.034 at VGS = - 10 V  
0.053 at VGS = - 4.5 V  
APPLICATIONS  
RoHS  
- 30  
11.5 nC  
COMPLIANT  
Load Switch  
TSOP-6  
Top View  
(4) S  
1
2
3
6
3 mm  
5
(3) G  
Marking Code  
AU XXX  
4
Lot Traceability  
and Date Code  
Part # Code  
2.85 mm  
(1, 2, 5, 6) D  
Ordering Information: Si3483CDV-T1-E3 (Lead (Pb)-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
VDS  
Limit  
- 30  
20  
Unit  
V
VGS  
- 8a  
- 7  
- 6.1b, c  
- 4.9b, c  
- 25  
TC = 25 °C  
C = 70 °C  
T
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
TA = 25 °C  
- 3.5  
- 1.67b, c  
4.2  
Continuous Source-Drain Diode Current  
T
C = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
2.7  
PD  
Maximum Power Dissipation  
W
2.0b, c  
1.3b, c  
TJ, Tstg  
- 55 to 150  
°C  
Operating Junction and Storage Temperature Range  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
RthJF  
Typical  
55  
Maximum  
62.5  
Unit  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot (Drain)  
t 5 s  
Steady State  
°C/W  
25  
30  
Notes:  
a. Package limited.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. Maximum under Steady State conditions is 110 °C/W.  
Document Number: 68603  
S-80893-Rev. A, 21-Apr-08  
www.vishay.com  
1

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