Datasheet > SI3400K

SI3400K

更新时间： 2024-11-22 18:09:47

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
6页	1266K
描述
Tape&Reel:3Kpcs/Reel;

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数据手册

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SI3400K 数据手册

SI3400K

Features

• Trench MOSFET Technology

• ESD Protected Up To 2KV (HBM)

• Moisture Sensitivity Level 1

• Halogen Free. “Green” Device ^{(Note 1)}

• Epoxy Meets UL 94 V-0 Flammability Rating

• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

N-Channel MOSFET

Maximum Ratings

•

Operating Junction Temperature Range: -55°C to +150°C

Storage Temperature Range: -55°C to +150°C

SOT-23

•

Thermal Resistance: 125°C/W Junction to Ambient^{(Note 2)}

Parameter

Rating

Unit

Symbol

Drain -source Voltage

Gate -Source Voltage

V_DS

V_GS

±12

T_A=25°C

5.8

3.6

23.2

Drain Current-Continuous

I_D

T_A=100°C

Pulsed Drain Current^{(Note 3)}

Power Dissipation^{(Note 4)}

Note:

I_DM

P_D

1. Halogen free "Green” products are defined as those which contain <900ppm bromine,

DIMENSIONS

<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

2. The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz.

INCHES

DIM

NOTE

MIN MAX MIN MAX

0.110 0.120 2.80 3.04

0.083 0.104 2.10 2.64

0.047 0.055 1.20 1.40

0.034 0.041 0.85 1.05

0.067 0.083 1.70 2.10

0.018 0.024 0.45 0.60

Copper, in a still air environment with T_A=25°C.

3. Repetitive rating; pulse width limited by max. junction temperature.

4. P_Dis based on max. junction temperature, using junction-ambient thermal resistance.

0.01 0.15

0.0004 0.006

0.035 0.043 0.90 1.10

0.003 0.007 0.08 0.18

0.012 0.020 0.30 0.51

Internal Structure and Marking Code

0.020

0.50

0.007

0.20

Suggested Solder Pad Layout

0.031

0.800

1. *$7E

2. 6285&(

R4K

0.035

0.900

3. '5$,1

0.079

2.000

inches

0.037

0.950

0.037

0.950

Rev.4-1-02052024

1/6

MCCSEMI.COM

12 3 4 5 6

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