Si2308CDS
Vishay Siliconix
www.vishay.com
N-Channel 60 V (D-S) MOSFET
FEATURES
• TrenchFET® Gen IV power MOSFET
SOT-23 (TO-236)
D
3
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
2
S
D
APPLICATIONS
• Battery switch
1
G
• DC/DC converter
Top View
• Load switch
G
Marking code: G3
PRODUCT SUMMARY
VDS (V)
60
S
N-Channel MOSFET
R
DS(on) max. (Ω) at VGS = 10 V
DS(on) max. (Ω) at VGS = 4.5 V
0.144
0.200
1.05
R
Qg typ. (nC)
D (A) d
I
2.6
Configuration
Single
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and halogen-free
Si2308CDS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
60
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
T
T
C = 25 °C
C = 70 °C
2.6
2.1
Continuous drain current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
1.9 a, b
1.5 a, b
6
A
Pulsed drain current (t = 100 μs)
IDM
IS
TC = 25 °C
TA = 25 °C
1.3
0.72 a, b
Continuous source-drain diode current
Single pulse avalanche current
Single pulse avalanche energy
IAS
4
L = 0.1 mH
EAS
0.8
mJ
W
T
C = 25 °C
1.6
TC = 70 °C
TA = 25 °C
TA = 70 °C
1
Maximum power dissipation
PD
0.9 a, b
0.6 a, b
-55 to +150
Operating junction and storage temperature range
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient a, c
SYMBOL
RthJA
TYPICAL
120
MAXIMUM
UNIT
t ≤ 10 s
Steady state
145
78
°C/W
Maximum junction-to-foot (drain)
RthJF
62
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. Maximum under steady state conditions is 175 °C/W
d. TC = 25 °C
S17-0939-Rev. A, 19-Jun-17
Document Number: 77744
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000