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SI2308BDS-T1-E3 PDF预览

SI2308BDS-T1-E3

更新时间: 2024-11-18 06:11:31
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
7页 117K
描述
N-Channel 60-V (D-S) MOSFET

SI2308BDS-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:7.08Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:403415
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT-23 (TO-236):
Samacsys Released Date:2020-02-18 15:08:08Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):2.3 A最大漏极电流 (ID):1.9 A
最大漏源导通电阻:0.156 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.66 W认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI2308BDS-T1-E3 数据手册

 浏览型号SI2308BDS-T1-E3的Datasheet PDF文件第2页浏览型号SI2308BDS-T1-E3的Datasheet PDF文件第3页浏览型号SI2308BDS-T1-E3的Datasheet PDF文件第4页浏览型号SI2308BDS-T1-E3的Datasheet PDF文件第5页浏览型号SI2308BDS-T1-E3的Datasheet PDF文件第6页浏览型号SI2308BDS-T1-E3的Datasheet PDF文件第7页 
New Product  
Si2308BDS  
Vishay Siliconix  
N-Channel 60-V (D-S) MOSFET  
FEATURES  
• TrenchFET Power MOSFET  
PRODUCT SUMMARY  
®
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a  
2.3  
100 % R Tested  
g
100 % UIS Tested  
0.156 at VGS = 10 V  
0.192 at VGS = 4.5 V  
RoHS  
60  
2.3 nC  
COMPLIANT  
2.1  
APPLICATIONS  
Battery Switch  
DC/DC Converter  
TO-236  
(SSOT23)  
G
S
1
2
3
D
Top View  
Si2308BDS (L8)*  
*Marking Code  
Ordering Information: Si2308BDS-T1-E3 (Lead (Pb)-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Unit  
Parameter  
Symbol  
Limit  
60  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
T
C = 25 °C  
C = 70 °C  
2.3  
T
1.8  
1.9b, c  
1.5b, c  
8
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
Pulsed Drain Current  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
1.39  
0.91b, c  
6
Continuous Source-Drain Diode Current  
Avalanche Current  
IAS  
L = 0.1 mH  
mJ  
W
Single-Pulse Avalanche Energy  
EAS  
1.8  
TC = 25 °C  
1.66  
TC = 70 °C  
1.06  
PD  
Maximum Power Dissipation  
1.09b, c  
0.7b, c  
- 55 to 150  
TA = 25 °C  
TA = 70 °C  
°C  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
90  
Maximum  
Unit  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot (Drain)  
5 s  
Steady State  
115  
75  
°C/W  
RthJF  
60  
Notes:  
a. Based on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. Maximum under Steady State conditions is 130 °C/W.  
Document Number: 69958  
S-80429-Rev. A, 03-Mar-08  
www.vishay.com  
1

SI2308BDS-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
SI2308BDS-T1-GE3 VISHAY

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