Datasheet > SI2308BDS

SI2308BDS

更新时间： 2024-11-18 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	117K
描述
N-Channel 60-V (D-S) MOSFET

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SI2308BDS 数据手册

New Product

Si2308BDS

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

FEATURES

• TrenchFET Power MOSFET

PRODUCT SUMMARY

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

2.3

•

100 % R Tested

100 % UIS Tested

0.156 at V_GS= 10 V

0.192 at V_GS= 4.5 V

RoHS

2.3 nC

COMPLIANT

2.1

APPLICATIONS

•

Battery Switch

•

DC/DC Converter

TO-236

(SSOT23)

Top View

Si2308BDS (L8)*

*Marking Code

Ordering Information: Si2308BDS-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Unit

Parameter

Symbol

Limit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

2.3

1.8

1.9^{b, c}

1.5^{b, c}

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

Pulsed Drain Current

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

1.39

0.91^{b, c}

Continuous Source-Drain Diode Current

Avalanche Current

I_AS

L = 0.1 mH

Single-Pulse Avalanche Energy

E_AS

1.8

T_C= 25 °C

1.66

T_C= 70 °C

1.06

P_D

Maximum Power Dissipation

1.09^{b, c}

0.7^{b, c}

- 55 to 150

T_A= 25 °C

T_A= 70 °C

°C

Operating Junction and Storage Temperature Range

T_J, T_stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

≤ 5 s

Steady State

115

°C/W

R_thJF

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 130 °C/W.

Document Number: 69958

S-80429-Rev. A, 03-Mar-08

www.vishay.com

12 3 4 5 6 7

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