Datasheet > SI2308

SI2308

更新时间： 2024-11-19 18:09:43

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	615K
描述
SOT-23

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中文翻译

获取价格

数据手册

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SI2308 数据手册

SI2308

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 Low on-resistance:R_DS(ON)≤160mΩ@V_GS=10V

 For Low power DC to DC converter application

 For Load switch application

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0



Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

Value

Unit

Gate-source voltage

V_GS

I_D

±20

Continuous drain current

T_A=25°C

T_A=70°C

I_D

2.3

Pulsed drain current (Note 1)

Power dissipation

I_DM

P_D

1.38

Thermal resistance from Junction to ambient

Junction temperature

R_θJA

T_J

°C/W

°C

150

Storage temperature

T_STG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

V^GS=0V, I^D=250μA

μA V_DS=60V,

V(BR)DSS

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage (note 1)

I_DSS

VGS=0V

V_DS=0V,

I_GSS

±100 nA

V^GS=±20V

VDS=VGS, ID=250μA

VGS=10V, ID=2A

VGS=4.5V, ID=1.7A

VDS=5V, ID=3A

V_GS(th)

3.0

160

220

mΩ

Drain-source on-resistance (note 1)

R_DS(ON)

Forward transconductance (note 1)

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Total gate charge

g_FS

C_iss

C_oss

C_rss

t_d(on)

t_r

t_d(off)

t_f

Q_g

490

780

V_{DS=25V, VGS=0V, f=1MHz}

VDS=30V, VGS=10V,

RD=30Ω, ID=1A,RG=3.3Ω

Gate-source charge

Gate-drain charge

Diode forward voltage (note 1)

Reverse Recovery Time

Reverse Recovery Charge

Q_gs

Q_gd

V_SD

T_rr

1.6

nC VDS=48V,VGS=4.5V,ID=3A

IS=1.2A, VGS=0V

1.2

VGS=0V, IS=3A,dI/dt=100A/μs

Q_rr

Note:1. Pulse test: Pulse width ≤300µs, Duty cycle ≤ 2% .

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E-mail:hkt@heketai.com

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