SI2308
LOW VOLTAGE MOSFET (N-CHANNEL)
FEATURES
Low on-resistance:RDS(ON)≤160mΩ@VGS=10V
For Low power DC to DC converter application
For Load switch application
Surface Mount device
SOT-23
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Drain-source voltage
Symbol
Value
60
Unit
V
V
DS
Gate-source voltage
VGS
ID
±20
3
V
Continuous drain current
TA=25°C
TA=70°C
A
ID
2.3
10
A
Pulsed drain current (Note 1)
Power dissipation
IDM
PD
A
1.38
90
W
Thermal resistance from Junction to ambient
Junction temperature
RθJA
TJ
°C/W
°C
°C
150
Storage temperature
TSTG
-55 ~+150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
VGS=0V, ID=250μA
μA VDS=60V,
V(BR)DSS
Drain-Source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate-threshold voltage (note 1)
60
V
IDSS
10
VGS=0V
VDS=0V,
IGSS
±100 nA
VGS=±20V
VDS=VGS, ID=250μA
VGS=10V, ID=2A
VGS=4.5V, ID=1.7A
VDS=5V, ID=3A
VGS(th)
1
3.0
160
220
V
mΩ
mΩ
S
pF
pF
pF
nS
nS
nS
nS
nC
Drain-source on-resistance (note 1)
RDS(ON)
Forward transconductance (note 1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Total gate charge
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
5
490
55
40
6
5
16
3
780
VDS=25V, VGS=0V, f=1MHz
VDS=30V, VGS=10V,
RD=30Ω, ID=1A,RG=3.3Ω
6
10
Gate-source charge
Gate-drain charge
Diode forward voltage (note 1)
Reverse Recovery Time
Reverse Recovery Charge
Qgs
Qgd
VSD
Trr
1.6
3
nC VDS=48V,VGS=4.5V,ID=3A
nC
IS=1.2A, VGS=0V
1.2
V
VGS=0V, IS=3A,dI/dt=100A/μs
VGS=0V, IS=3A,dI/dt=100A/μs
25
26
nS
nC
Qrr
Note:1. Pulse test: Pulse width ≤300µs, Duty cycle ≤ 2% .
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