Datasheet > SI2307CDS

SI2307CDS

更新时间： 2024-11-18 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	110K
描述
P-Channel 30-V (D-S) MOSFET

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SI2307CDS 数据手册

New Product

Si2307CDS

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free Option Available

TrenchFET^®Power MOSFET

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^{a, b}

•

0.088 at V_GS= - 10 V

0.138 at V_GS= - 4.5 V

- 2.7

- 2.2

- 30

4.1 nC

RoHS

COMPLIANT

APPLICATIONS

•

Load Switch for Portable Devices

TO-236

(SOT-23)

Top View

Si2307CDS (N7)*

* Marking Code

Ordering Information: Si2307CDS-T1-E3 (Lead (Pb)-free)

Si2307CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 30

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

_C= 70 °C

- 3.5

- 2.8

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

- 2.7^{a, b}

- 2.2^{a, b}

- 12

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current^{a, b}

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

- 1.5

- 0.91^{a, b}

1.8

1.14

Maximum Power Dissipation^{a, b}

P_D

1.1^{a, b}

T_A= 25 °C

0.7^{a, b}

- 55 to 150

260

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^c

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, c}

Symbol

Typical

Maximum

115

Unit

R_thJA

t ≤ 5 s

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Steady State

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Maximum under Steady State conditions is 166 °C/W.

Document Number: 68768

S-81580-Rev. A, 07-Jul-08

www.vishay.com

12 3 4 5 6

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