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SI2306BDS-T1-E3 PDF预览

SI2306BDS-T1-E3

更新时间: 2024-11-18 06:11:31
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管光电二极管PC
页数 文件大小 规格书
5页 113K
描述
N-Channel 30-V (D-S) MOSFET

SI2306BDS-T1-E3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Not Recommended零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:7.06Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:184095
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT-23 (TO-236)
Samacsys Released Date:2015-04-13 16:58:57Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):3.16 A最大漏极电流 (ID):3.16 A
最大漏源导通电阻:0.047 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.25 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管元件材料:SILICON
Base Number Matches:1

SI2306BDS-T1-E3 数据手册

 浏览型号SI2306BDS-T1-E3的Datasheet PDF文件第2页浏览型号SI2306BDS-T1-E3的Datasheet PDF文件第3页浏览型号SI2306BDS-T1-E3的Datasheet PDF文件第4页浏览型号SI2306BDS-T1-E3的Datasheet PDF文件第5页 
Si2306BDS  
Vishay Siliconix  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free Option Available  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
4.0  
Qg (Typ.)  
TrenchFET® Power MOSFET  
100 % Rg Tested  
0.047 at VGS = 10 V  
0.065 at VGS = 4.5 V  
30  
3.0  
RoHS  
3.5  
COMPLIANT  
TO-236  
(SOT-23)  
G
S
1
2
3
D
Top View  
Si2306BDS (L6 )*  
* Marking Code  
Ordering Information: Si2306BDS-T1-E3 (Lead (Pb)-free)  
Si2306BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
5 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
20  
V
VGS  
TA = 25 °C  
TA = 70 °C  
4.0  
3.5  
3.16  
2.7  
Continuous Drain Current (TJ = 150 °C)a, b  
ID  
A
IDM  
IS  
Pulsed Drain Current  
20  
Continuous Source Current (Diode Conduction)a, b  
1.04  
1.25  
0.8  
0.62  
0.75  
0.48  
TA = 25 °C  
TA = 70 °C  
Maximum Power Dissipationa, b  
PD  
W
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
80  
Maximum  
100  
Unit  
t 5 s  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
RthJA  
Steady State  
Steady State  
130  
60  
166  
°C/W  
RthJF  
75  
Notes:  
a. Surface Mounted on FR4 board, t 5 s.  
b. Pulse width limited by maximum junction temperature.  
c. Surface Mounted on FR4 board.  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm  
Document Number: 73234  
S-80642-Rev. B, 24-Mar-08  
www.vishay.com  
1

SI2306BDS-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
2N7002K-T1-GE3 VISHAY

类似代替

N-Channel 60-V (D-S) MOSFET
2N7002K-T1-E3 VISHAY

类似代替

N-Channel 60-V (D-S) MOSFET

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