SI2306BDS

更新时间： 2024-11-18 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	113K
描述
N-Channel 30-V (D-S) MOSFET

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SI2306BDS 数据手册

Si2306BDS

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free Option Available

V_DS(V)

R_DS(on)(Ω)

I_D(A)

4.0

Q_g(Typ.)

TrenchFET^®Power MOSFET

100 % R_gTested

0.047 at V_GS= 10 V

0.065 at V_GS= 4.5 V

3.0

RoHS

3.5

COMPLIANT

TO-236

(SOT-23)

Top View

Si2306BDS (L6 )*

* Marking Code

Ordering Information: Si2306BDS-T1-E3 (Lead (Pb)-free)

Si2306BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

4.0

3.5

3.16

2.7

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^{a, b}

1.04

1.25

0.8

0.62

0.75

0.48

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation^{a, b}

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

100

Unit

t ≤ 5 s

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

130

166

°C/W

R_thJF

Notes:

a. Surface Mounted on FR4 board, t ≤ 5 s.

b. Pulse width limited by maximum junction temperature.

c. Surface Mounted on FR4 board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 73234

S-80642-Rev. B, 24-Mar-08

www.vishay.com

12 3 4 5

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