SI2306
LOW VOLTAGE MOSFET (N-CHANNEL)
FEATURES
Ultra low on-resistance:VDS=30V,RDS(ON)=35mΩ@VGS=10V,ID=3.6A
For Low power DC to DC converter application
For Load switch application
Surface Mount device
SOT-23
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Drain-source voltage
Symbol
Value
30
Unit
V
V
DS
Gate-source voltage
VGS
ID
±20
3.6
V
Continuous drain current
Pulsed drain current (Note 1)
Continuous Source current
Power dissipation
A
IDM
IS
20
A
0.62
0.75
100
150
A
PD
W
Thermal resistance from Junction to ambient
Junction temperature
RθJA
TJ
°C/W
°C
°C
Storage temperature
TSTG
-55 ~+150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
VGS=0V, ID=250μA
μA VDS=30V,
V(BR)DSS
Drain-Source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate-threshold voltage (note 1)
30
V
IDSS
1
VGS=0V
VDS=0V,
IGSS
±100 nA
VGS=±20V
VDS=VGS, ID=250μA
VGS=10V, ID= 3.6A
VGS=4.5V, ID=2A
VDS=4.5V, ID=2.5A
f=1.0MHz
VGS(th) 1.0
1.6
26
39
7.0
5
2.2
35
53
V
mΩ
mΩ
S
Drain-source on-resistance (note 1)
RDS(ON)
Forward transconductance (note 1)
Gate resistance
gFS
Rg
2.5
7.5
Ω
Input capacitance
Ciss
Coss
Crss
td(on)
tr
305
65
29
7
12
14
6
pF
pF
pF
nS
nS
nS
nS
VDS=15V, VGS=0V, f=1MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
11
18
25
10
4.5
9
VDD=15V, VGEN=10V,
Rg=6Ω, ID≈1A,RL=15Ω
td(off)
tf
3.0
6
nC VDS=15V,VGS=5V,ID=2.5A
nC
Total gate charge
Qg
Gate-source charge
Gate-drain charge
Diode forward voltage (note 1)
Diode forward current-continuous
Qgs
Qgd
VSD
IS
1.6
0.6
0.8
nC VDS=15V,VGS=10V,ID=2.5A
nC
IS=1.25A, VGS=0V
1.2
0.62
V
A
TC=25
°C
Note:1. Pulse test: Pulse width ≤300µs, Duty cycle ≤ 2% .
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