5秒后页面跳转
SI2306 PDF预览

SI2306

更新时间: 2024-09-16 18:09:15
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
4页 540K
描述
SOT-23

SI2306 数据手册

 浏览型号SI2306的Datasheet PDF文件第2页浏览型号SI2306的Datasheet PDF文件第3页浏览型号SI2306的Datasheet PDF文件第4页 
SI2306  
LOW VOLTAGE MOSFET (N-CHANNEL)  
FEATURES  
Ultra low on-resistance:VDS=30V,RDS(ON)=35mΩ@VGS=10V,ID=3.6A  
For Low power DC to DC converter application  
For Load switch application  
Surface Mount device  
SOT-23  
MECHANICAL DATA  
Case: SOT-23  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.008 grams (approximate)  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Drain-source voltage  
Symbol  
Value  
30  
Unit  
V
V
DS  
Gate-source voltage  
VGS  
ID  
±20  
3.6  
V
Continuous drain current  
Pulsed drain current (Note 1)  
Continuous Source current  
Power dissipation  
A
IDM  
IS  
20  
A
0.62  
0.75  
100  
150  
A
PD  
W
Thermal resistance from Junction to ambient  
Junction temperature  
RθJA  
TJ  
°C/W  
°C  
°C  
Storage temperature  
TSTG  
-55 ~+150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol Min Typ Max Unit  
Conditions  
VGS=0V, ID=250μA  
μA VDS=30V,  
V(BR)DSS  
Drain-Source breakdown voltage  
Zero gate voltage drain current  
Gate-body leakage current  
Gate-threshold voltage (note 1)  
30  
V
IDSS  
1
VGS=0V  
VDS=0V,  
IGSS  
±100 nA  
VGS=±20V  
VDS=VGS, ID=250μA  
VGS=10V, ID= 3.6A  
VGS=4.5V, ID=2A  
VDS=4.5V, ID=2.5A  
f=1.0MHz  
VGS(th) 1.0  
1.6  
26  
39  
7.0  
5
2.2  
35  
53  
V
mΩ  
mΩ  
S
Drain-source on-resistance (note 1)  
RDS(ON)  
Forward transconductance (note 1)  
Gate resistance  
gFS  
Rg  
2.5  
7.5  
Ω
Input capacitance  
Ciss  
Coss  
Crss  
td(on)  
tr  
305  
65  
29  
7
12  
14  
6
pF  
pF  
pF  
nS  
nS  
nS  
nS  
VDS=15V, VGS=0V, f=1MHz  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Turn-on rise time  
Turn-off delay time  
Turn-off fall time  
11  
18  
25  
10  
4.5  
9
VDD=15V, VGEN=10V,  
Rg=6Ω, ID≈1A,RL=15Ω  
td(off)  
tf  
3.0  
6
nC VDS=15V,VGS=5V,ID=2.5A  
nC  
Total gate charge  
Qg  
Gate-source charge  
Gate-drain charge  
Diode forward voltage (note 1)  
Diode forward current-continuous  
Qgs  
Qgd  
VSD  
IS  
1.6  
0.6  
0.8  
nC VDS=15V,VGS=10V,ID=2.5A  
nC  
IS=1.25A, VGS=0V  
1.2  
0.62  
V
A
TC=25  
°C  
Note:1. Pulse test: Pulse width ≤300µs, Duty cycle ≤ 2% .  
1 / 4  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

与SI2306相关器件

型号 品牌 获取价格 描述 数据表
SI2306A UMW

获取价格

漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时):4A;栅极-源极阈值电
SI2306BDS VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET
SI2306BDS-T1-E3 VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET
SI2306BDS-T1-GE3 VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET
SI2306DS VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET
SI2306DS (KI2306DS) KEXIN

获取价格

N-Channel MOSFET
SI2306DS-E3 VISHAY

获取价格

TRANSISTOR 3.5 A, 30 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236, TO-236, 3 PIN, FE
SI2306DS-T1 VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET
SI2306DS-T1-E3 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI2306K MCC

获取价格

Tape&Reel:3Kpcs/Reel;