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SI1903DL PDF预览

SI1903DL

更新时间: 2024-10-15 18:09:59
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
5页 1442K
描述
Dual P-MOSFETs

SI1903DL 数据手册

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SMD Type  
MOSFET  
Dual P-Channel MOSFET  
SI1903DL (KI1903DL)  
Features  
VDS (V) =-20V  
ID =-4.1 A (VGS =-10V)  
RDS(ON) 0.995Ω (VGS =-4.5V)  
RDS(ON) 1.19Ω (VGS =-3.6V)  
RDS(ON) 1.8Ω (VGS =-2.5V)  
1 S1 4 S2  
2 G1 5 G2  
3 D2 6 D1  
S
1
G
1
D
2
1
2
3
6
5
D
1
G
2
4
S
2
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Symbol  
5 Secs  
Steady State  
Unit  
V
-20  
VDS  
GS  
Gate-Source Voltage  
V
±12  
- 0.44  
- 0.31  
- 0.41  
- 0.3  
Ta = 25℃  
Continuous Drain Current  
Pulsed Drain Current  
Power Dissipation  
ID  
A
Ta = 75℃  
I
DM  
-1  
0.3  
0.16  
415  
-
0.27  
0.14  
460  
350  
Ta = 25℃  
Ta = 75℃  
P
D
W
/W  
Thermal Resistance.Junction- to-Ambient  
Thermal Resistance.Junction- to-Foot  
Junction Temperature  
R
thJA  
thJF  
R
150  
T
J
Junction Storage Temperature Range  
-55 to 150  
T
stg  
1
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