Datasheet > SI03N06

SI03N06

更新时间： 2024-04-09 19:02:08

品牌	Logo	应用领域
美微科 - MCC		/
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6页	1524K
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SI03N06 数据手册

SI03N06

Features

• Trench Power LV MOSFET Technology

• High Speed switching

• Moisture Sensitivity Level 1

• Halogen Free. “Green” Device ^{(Note 1)}

N-Channel MOSFET

• Epoxy Meets UL 94 V-0 Flammability Rating

• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

Maximum Ratings

• Operating Junction Temperature Range : -55°C to +150°C

• Storage Temperature Range: -55°C to +150°C

• Thermal Resistance: 105°C/W Junction to Ambient^(Note2)

SOT-23

Parameter

Drain-Source Voltage

Rating

Unit

Symbol

V_DS

Gate-Source Voltage

V_GS

±20

T_A=25°C

I_D

Drain Current-Continuous

T_A=100°C

1.9

1.2

Pulsed Drain Current^{(Note 3)}

I_DM

P_D

Power Dissipation^{(Note 4)}

Note:

1. Halogen free "Green” products are defined as those which contain <900ppm bromine,

<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

DIMENSIONS

The value of RθJA is measured with the device mounted on 1 in ²FR-4 board with

INCHES

DIM

NOTE

2oz. copper, in a still air environment with TJ=25°C.

3. Repetitive rating; pulse width limited by max. junction temperature.

MIN MAX MIN MAX

0.110 0.120 2.80 3.04

0.083 0.104 2.10 2.64

0.047 0.055 1.20 1.40

0.034 0.041 0.85 1.05

0.067 0.083 1.70 2.10

0.018 0.024 0.45 0.60

4. P is based on max. junction temperature, using junction-ambient thermal resistance.

0.01 0.15

0.0004 0.006

0.035 0.043 0.90 1.10

0.003 0.007 0.08 0.18

0.012 0.020 0.30 0.51

0.020

0.50

0.007

0.20

Internal Structure and Marking Code

Suggested Solder Pad Layout

0.031

0.800

0.035

0.900

1. GATE

2. SOURCE

0.079

2.000

inches

03N06C.

3. DRAIN

0.037

0.950

0.037

0.950

Rev.4-1-07102023

1/6

MCCSEMI.COM

12 3 4 5 6

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