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SI-5155S PDF预览

SI-5155S

更新时间: 2024-11-24 22:43:15
品牌 Logo 应用领域
三垦 - SANKEN 开关电源开关
页数 文件大小 规格书
2页 31K
描述
High-side Power Switch with Diagnostic Function

SI-5155S 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:,针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.84
内置保护:OVER CURRENT; THERMAL接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PZFM-T5功能数量:1
端子数量:5最高工作温度:100 °C
最低工作温度:-40 °C输出电流流向:SOURCE
标称输出峰值电流:2.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大供电电压:30 V
最小供电电压:6 V标称供电电压:14 V
表面贴装:NO温度等级:INDUSTRIAL
端子形式:THROUGH-HOLE端子位置:ZIG-ZAG
断开时间:30 µs接通时间:30 µs
Base Number Matches:1

SI-5155S 数据手册

 浏览型号SI-5155S的Datasheet PDF文件第2页 
High-side Power Switch with Diagnostic Function SI-5155S  
(unit: mm)  
External Dimensions  
Features  
Built-in diagnostic function to detect short and open circuiting of loads and  
output status signals  
Low saturation PNP transistor use  
3.2 ±0.2  
4.2 ±0.2  
2.8 ±0.2  
10±0.2  
Allows direct driving using LS-TTL and C-MOS logic levels  
Built-in overcurrent and thermal protection circuits  
Built-in protection against reverse connection of power supply  
Tj = 150ºC guaranteed  
TO-220 equivalent full-mold package not require insulation mica  
a
2.6 ±0.1  
b
0.94 ±0.15  
Absolute Maximum Ratings  
(Ta =25ºC)  
+0.2  
–0.1  
+0.2  
–0.1  
Parameter  
Power supply voltage  
Input terminal voltage  
DIAG terminal voltage  
Collector-emitter voltage  
Output current  
Symbol  
Ratings  
Unit  
Conditions  
0.45  
0.85  
P1.7 ±0.15 • 4  
4 ±0.6  
VB  
–13 to +40  
V
V
V
IN  
–0.3 to VB  
1. GND  
a: Type No.  
b: Lot No.  
VDIAG  
VCE  
IO  
6
40  
V
2. V  
IN  
3. V  
o
V
1
2
3
4
5
4. DIAG  
5. VB  
2.5  
A
(Forming No. 1111)  
PD1  
PD2  
Tj  
22  
W
W
ºC  
ºC  
ºC  
With infinite heatsink (Tc =25ºC)  
Stand-alone without heatsink  
Power dissipation  
1.8  
Junction temperature  
Operating temperature  
Storage temperature  
–40 to +150  
–40 to +100  
–40 to +150  
TOP  
Tstg  
Standard Circuit Diagram  
VB  
5
VO  
PZ  
Electrical Characteristics  
(Ta =25ºC unless otherwise specified)  
3
SI-5155S  
VCC  
Ratings  
typ  
V
Parameter  
Symbol  
Unit  
Conditions  
IN  
2
DIAG  
min  
6.0  
max  
30  
4
5.1k  
VBopr  
Iq  
V
mA  
V
Operating power supply voltage  
Quiescent circuit current  
LS-TTL  
or  
1
5
12  
VBopr =14V, VIN = 0 V  
CMOS  
0.3  
0.72  
2
IO 1.0A, VBopr =6 to 16V  
IO 2.5A, VBopr =6 to 16V  
VCEO =16V, VIN = 0 V  
Saturation voltage of output  
transistor  
VCE (sat)  
IO, leak  
V
GND  
Truth table  
mA  
V
Output leak current  
V
IN  
VO  
H
V
2.0  
VB  
VBopr =6 to 16V  
Output ON  
Input voltage  
IH  
H
VBopr =6 to 16V  
V
IL  
–0.3  
0.8  
1
V
Output OFF  
L
L
IIH  
IIL  
mA  
mA  
V
IN = 5 V  
Output ON  
Input current  
–0.1  
2.6  
VIN = 0 V  
Output OFF  
Overcurrent protection starting  
current  
IS  
A
VBopr = 14V, VO = VBopr 1.5V  
Diagnostic Function  
Thermal protection starting  
temperature  
VBopr 6V  
TTSD  
150  
ºC  
Normal  
Open load  
Shorted load  
Overheat  
Normal  
Ropen  
TON  
TOFF  
VDH  
VDL  
30  
30  
30  
6
k  
µS  
µS  
V
VBopr =6 to 16V  
Bopr =14V, IO = 1 A  
Bopr =14V, IO = 1 A  
CC =6V, VBopr =6 to 16V  
Open load detection resistor  
Output transfer time  
V
IN  
8
V
15  
V
VO  
4.5  
V
DIAG output voltage  
0.3  
30  
30  
V
V
CC  
=6V,  
V
Bopr  
=6 to 16V,  
I
DO  
=2mA  
DIAG  
TPLH  
TPHL  
L
µS  
µS  
mH  
VBopr =14V, IO = 1 A  
Bopr =14V, IO = 1 A  
DIAG output transfer time  
Minimum load inductance  
V
1
V
VO  
DIAG  
Mode  
IN  
L
H
L
H
L
H
L
H
L
H
H
H
L
L
L
L
L
H
H
H
L
L
L
L
Normal  
Note:  
Open load  
* The rule of protection against reverse connection of power supply is VB= –13V, one minute  
(all terminals except, VB and GND, are open).  
S h o rte d lo a d  
Overheat  
DIAG output will be undetermined when a voltage  
exceeding 25V is applied to VB terminal.  
28  

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