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SHF1403SMSS PDF预览

SHF1403SMSS

更新时间: 2024-01-06 19:33:36
品牌 Logo 应用领域
SSDI 功效二极管
页数 文件大小 规格书
2页 39K
描述
Rectifier Diode, 1 Phase, 1 Element, 4A, 300V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN

SHF1403SMSS 技术参数

生命周期:Active包装说明:E-LELF-R2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.71应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:E-LELF-R2最大非重复峰值正向电流:75 A
元件数量:1相数:1
端子数量:2最大输出电流:4 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:300 V最大反向恢复时间:0.03 µs
表面贴装:YES端子形式:WRAP AROUND
端子位置:ENDBase Number Matches:1

SHF1403SMSS 数据手册

 浏览型号SHF1403SMSS的Datasheet PDF文件第2页 
SHF1402 - SHF1406  
and  
SHF1402SMS - SHF1406SMS  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
4 AMP  
200–600 Volts  
30 nsec  
SHF14 __ __ __  
L Screening2/ = None  
HYPER FAST RECTIFIER  
TX = TX Level  
TXV = TXV Level  
S = S Level  
Features:  
Guaranteed High Temp. trr: 50 nsec Max (Axial) trr:  
60nsec Max (SMS)  
Hyper Fast Recovery: 30 nsec Max.  
PIV to 600 Volts  
Package  
L
___ = Axial Leaded  
SMS = Surface Mount Square Tab  
L
Voltage  
Void Free Construction  
Hermetically Sealed  
02 = 200 V  
03 = 300 V  
04 = 400 V  
05 = 500 V  
06 = 600 V  
Low Reverse Leakage Current  
For High Efficiency Applications  
Replacement for 1N6626 Series where faster trr is  
required  
TX, TXV, and S-Level Screening Available2/  
Maximum Ratings  
Symbol  
Value  
Units  
200  
300  
400  
500  
600  
SHF1402  
SHF1403  
SHF1404  
SHF1405  
SHF1406  
Peak Repetitive Reverse and  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
Volts  
Average Rectified Forward Current  
(Resistive Load, 60 Hz Sine Wave, TA = 55ºC, L=3/8”)  
4
Io  
Amps  
Amps  
Surge Current  
75  
IFSM  
(Single 8.3 ms Pulse, Half Sine Superimposed on Io, TA = 55ºC)  
Repetitive Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to  
20  
IFRM  
Amps  
Reach Equilibrium Between Pulses, TA = 55ºC)  
-65 to +175  
Operating & Storage Temperature  
Top & Tstg  
ºC  
Junction to Lead, L = 3/8 "  
Maximum Thermal Resistance  
20  
14  
RθJL  
RθJE  
ºC/W  
Junction to End  
Notes:  
Axial Leaded  
SMS (Square)  
1/ For Ordering Information, Price, Operating  
Curves, and Availability – Contact Factory.  
2/ Screening Based on MIL-PRF-19500. Screening  
Flows Available on Request.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RH0023B  
DOC  

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