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SHF1109SMS PDF预览

SHF1109SMS

更新时间: 2024-11-09 03:32:15
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
2页 156K
描述
1 AMP 400 - 900 V Hyper Fast Rectifier

SHF1109SMS 技术参数

生命周期:Active包装说明:E-LELF-R2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.69外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:E-LELF-R2
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:GLASS
封装形状:ELLIPTICAL封装形式:LONG FORM
认证状态:Not Qualified最大重复峰值反向电压:900 V
最大反向恢复时间:0.04 µs表面贴装:YES
端子形式:WRAP AROUND端子位置:END
Base Number Matches:1

SHF1109SMS 数据手册

 浏览型号SHF1109SMS的Datasheet PDF文件第2页 
SHF1104 & SHF1104SMS  
thru  
Solid State Devices, Inc.  
14830 Valley View Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
SHF1109 & SHF1109SMS  
DESIGNER’S DATA SHEET  
1 AMP  
Features:  
400 - 900 V  
Hyper Fast Recovery: 40 nsec maximum  
Hyper Fast Rectifier  
PIV to 900 Volts, Consult Factory  
Hermetically Sealed  
Axial Lead Diode  
SMS  
Void Free Construction  
For High Efficiency Applications  
Replaces UES 1104, UES1106, IN6624  
TX, TXV, S Level screening Available  
Maximum Ratings  
Symbol  
Value  
Units  
SHF1104  
SHF1106  
SHF1108  
SHF1109  
400  
600  
800  
900  
VRRM  
VRSM  
VR  
Peak Repetitive Reverse and DC Blocking Voltage  
Volts  
Average Rectified Forward Current  
Io  
1.0  
Amps  
(Resistive Load, 60 hz Sine Wave, TA = 25 °C)  
Peak Surge Current  
IFSM  
OP & TSTG  
RθJE  
20  
Amps  
ºC  
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)  
Operating & Storage Temperature  
T
-65 to +175  
Maximum Thermal Resistance  
Junction to Leads, L = 3/8  
Junction to Tabs  
35  
28  
ºC/W  
NOTE: All specifications are subject to change without notification.  
DATA SHEET #: RH0111E  
DOC  
SCD's for these devices should be reviewed by SSDI prior to release.  

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