5秒后页面跳转
SHD724502 PDF预览

SHD724502

更新时间: 2024-09-23 21:14:35
品牌 Logo 应用领域
SENSITRON 局域网晶体管
页数 文件大小 规格书
3页 38K
描述
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-258AA, TO-258, 3 PIN

SHD724502 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-258AA
包装说明:FLANGE MOUNT, R-XSFM-P3针数:3
Reach Compliance Code:compliant风险等级:5.81
最大集电极电流 (IC):40 A集电极-发射极最大电压:1200 V
配置:SINGLE WITH BUILT-IN DIODEJEDEC-95代码:TO-258AA
JESD-30 代码:R-XSFM-P3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称断开时间 (toff):350 ns
标称接通时间 (ton):140 nsBase Number Matches:1

SHD724502 数据手册

 浏览型号SHD724502的Datasheet PDF文件第2页浏览型号SHD724502的Datasheet PDF文件第3页 
SHD724502  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 1004, REV. A  
Formerly part number SHDG1025  
1200 VOLT, 35 AMP IGBT DEVICE  
HIGH SPEED, IMPROVED SCSOA  
WITH FAST REVERSE RECOVERY DIODE  
ELECTRICAL CHARACTERISTICS  
PARAMETER  
(Tj=250C UNLESS OTHERWISE SPECIFIED)  
SYMBOL  
MIN  
TYP  
MAX  
UNIT  
IGBT SPECIFICATIONS  
Collector to Emitter Breakdown Voltage  
IC = 250 μA, VGE = 0V  
BVCES  
-
-
-
-
1200  
V
A
Continuous Collector Current  
TC = 25 OC  
TC = 90 OC  
IC  
40 (1)  
35  
Gate to Emitter Voltage  
VGE  
-
-
-
-
+/-20  
V
nA  
V
Gate-Emitter Leakage Current IGE = +/-20V  
IGES  
+/-500  
7.5  
Gate Threshold Voltage, IC=2mA  
Zero Gate Voltage Collector Current  
VGE=0V VCE = 1200 V, Ti=25oC  
V GE(TH)  
ICES  
4.5  
-
6.0  
-
1000  
5.0  
μA  
mA  
V
CE = 800 V, Ti=125oC  
Collector to Emitter Saturation Voltage  
IC = 35A, VGE = 15V  
-
-
VCE(SAT)  
2.7  
3.3  
-
V
Input Capacitance  
Output Capacitance  
Reverse Transfer Cap.  
Cies  
Coes  
Cres  
8400  
350  
90  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Turn On Delay Time  
Rise Time  
Turn Off Delay Time  
Fall Time  
td(on)  
tr  
td(off)  
tf  
-
-
-
90  
50  
270  
80  
-
-
-
nsec  
Turn-off Energy Loss  
Turn-on Energy Loss  
Eoff  
Eon  
mJ  
mJ  
-
-
-
-
4.7  
5.5  
(IC = 30A, VGE = 15V, VCE = 600 V, RG = 5 Ω  
Junction-to-Case Thermal Resistance  
-
-
0.35  
oC/W  
RθJC  
221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 •  
World Wide Web Site - http://www.sensitron.com E-mail Address - sales@sensitron.com •  

与SHD724502相关器件

型号 品牌 获取价格 描述 数据表
SHD724602 SENSITRON

获取价格

Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-258AA, TO-258, 3
SHD739601 SENSITRON

获取价格

Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, SHD-6, 3 PIN
SHD763701 SENSITRON

获取价格

WITH FAST REVERSE RECOVERY DIODE
SHD8 CIT

获取价格

CIT SWITCH
SHD830004 SENSITRON

获取价格

Three-Phase MOSFET/IGBT Bridge Driver
SHD830301 SENSITRON

获取价格

Standard Three-Phase MOSFET/IGBT Bridge Driver
SHD833001 SENSITRON

获取价格

Half Bridge Based MOSFET Driver, 6A, BCDMOS, CDIP8, 8 PIN
SHD834004 SENSITRON

获取价格

HERMETIC HALF-BRIDGE MOSFET/IGBT GATE Driver
SHD849401 SENSITRON

获取价格

Space Level Transistor Array/Transistor Driver
SHD850001 SENSITRON

获取价格

6A-Peak Low Side MOSFET Driver Bipolar/CMOS/DMOS Process