SHD626150P

更新时间： 2024-09-23 04:04:51

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
4页	75K
描述
HERMETIC SILICON CARBIDE RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SHD626150P 数据手册

SHD626150

SHD626150D

SHD626150N

SHD626150P

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 4234, REV. -

HERMETIC SILICON CARBIDE RECTIFIER

DESCRIPTION: A 300-VOLT, 20 AMP, POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-257

PACKAGE AVAILABLE SCREENED TO ANY REQUIRED LEVEL

FEATURES:

•

NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR

High Temperature Option - Maximum operation & storage temperature can be increased to 250^oC;

use part number prefix as SHDT

•

High Frequency Option - Non-magnetic Glidcop leads are available for improved performance at

high frequency; use part number prefix SHDG

Ceramic Seal Option – For ceramic seals use part number prefix SHDC

MAXIMUM RATINGS

RATING

ALL RATINGS ARE @ T_C= 25 °C UNLESS OTHERWISE SPECIFIED.

SYMBOL

MAX.

300

UNITS

Volts

PEAK INVERSE VOLTAGE

PIV

I_O

MAXIMUM DC OUTPUT CURRENT (With T_C= 65 ^OC, for part numbers with P and

N suffixes)

Amps

MAXIMUM DC OUTPUT CURRENT (With T_C= 65 ^OC, for part numbers with Single

and D suffixes)

I_O

Amps

MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG

(t = 8.3ms, Sine) per leg, T_C= 25 ^OC

I_FRM

MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG

I_FSM

200

(t = 10µs, Pulse) per leg, T_C= 25 ^OC

MAXIMUM JUNCTION CAPACITANCE (V_r=5V) per leg

MAXIMUM POWER DISSIPATION, T_C= 25 ^OC

C_T

P_d

660

MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL PACKAGE

For Common Cathode/Anode Configurations)

4.8

R_θ_JC

°C/W

MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE

Top, Tstg

-55 to +175

°C

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC

TYP

MAX.

UNITS

0.90

1.00

1.20

1.30

MAXIMUM FORWARD VOLTAGE DROP, Pulsed

(I_f= 5 A PER LEG) V_f

T_J= 25 °C

T_J=175 °C

Volts

1.20

1.40

1.80

MAXIMUM FORWARD VOLTAGE DROP, Pulsed

(I_f= 10 A PER LEG) V_f

T_J= 25 °C

T_J= 175 °C

Volts

0.05

1.00

0.25

2.00

MAXIMUM REVERSE CURRENT (I_r@ 300V PIV PER LEG) T_J= 25 °C

T_J= 175 °C

11.5

N/A

TOTAL CAPACITIVE CHARGE (V_R=300V I_F=10A di/dt=500A/µs T_J=25°C) Q_Cper

leg

• 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 •

• World Wide Web - http://www.sensitron.com • E-mail Address - sales@sensitron.com •

12 3 4

中文翻译

下载PDF

与SHD626150P相关器件

型号	品牌	获取价格	描述	数据表
SHD626160	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, Silicon Carbide, TO-257AA, HERMETIC SEALED, TO-2
SHD626160D	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 20A, Silicon Carbide, TO-257AA, HERMETIC SEALED, TO-2
SHD626160N	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 40A, Silicon Carbide, TO-257AA, HERMETIC SEALED, TO-2
SHD626160P	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 40A, Silicon Carbide, TO-257AA, HERMETIC SEALED, TO-2
SHD626532	SENSITRON	获取价格	DESCRIPTION: A 1200, Min VOLT, 20 AMP POWER SILICON CARBIDE Nch FET IN AN ISOLATED HERMETI
SHD671182P	SENSITRON	获取价格	DESCRIPTION: A 1200 VOLT, 3 AMP, SiC SCHOTTKY RECTIFIER
SHD674052	SENSITRON	获取价格	HERMETIC SILICON CARBIDE RECTIFIER
SHD674052A	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, Silicon Carbide, HERMETIC SEALED, CERAMIC, SHD-3A
SHD674052B	SENSITRON	获取价格	HERMETIC SILICON CARBIDE RECTIFIER
SHD674062	SENSITRON	获取价格	HERMETIC SILICON CARBIDE RECTIFIER

与SHD626150P相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

3
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

6
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

78
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

68

产品中心

服务支持

精选活动

关于我们

帮助中心

SHD626150P

SHD626150P 数据手册

与SHD626150P相关器件

与SHD626150P相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SHD626150P

SHD626150P 数据手册

与SHD626150P相关器件

与SHD626150P相关文章

您还可以找

您在本页遇到什么问题？