Datasheet > SHD626031_09

SHD626031_09

更新时间： 2024-09-23 09:26:35

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
3页	65K
描述
HERMETIC SILICON CARBIDE RECTIFIER

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中文翻译

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SHD626031_09 数据手册

SHD626031

SHD626031P

SHD626031N

SHD626031D

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 4284, REV. E

HERMETIC SILICON CARBIDE RECTIFIER

DESCRIPTION: A 600-VOLT, 8 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-257

PACKAGE AVAILABLE SCREENED TO ANY REQUIRED LEVEL

FEATURES:

•

NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR

High Frequency Option - Non-magnetic Glidcop leads are available for improved performance at

high frequency; use part number prefix SHDG

•

Ceramic Seal Option – For ceramic seals use part number prefix SHDC

MAXIMUM RATINGS

RATING

ALL RATINGS ARE @ T_C= 25 °C UNLESS OTHERWISE SPECIFIED.

SYMBOL

MAX.

600

UNITS

Volts

PEAK INVERSE VOLTAGE

PIV

I_O

MAXIMUM DC OUTPUT CURRENT (With T_C= 65 ^OC, for part numbers with P and

N suffixes)

Amps

MAXIMUM DC OUTPUT CURRENT (With T_C= 65 ^OC, for part numbers with Single

and D suffixes)

I_O

Amps

MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG

(t = 8.3ms, Sine) per leg, T_C= 25 ^OC

I_FRM

MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG

I_FSM

110

(t = 10μs, Pulse) per leg, T_C= 25 ^OC

MAXIMUM POWER DISSIPATION, T_C= 25 ^OC,

P_d

MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL PACKAGE

For Common Cathode/Anode Configurations)

5.6

R_θ_JC

°C/W

MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*

Top, Tstg

-55 to

+200

°C

* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device

above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC

TYP

MAX.

UNITS

1.50

2.00

1.85

2.40

MAXIMUM FORWARD VOLTAGE DROP

Pulsed (I_f= 4 A PER LEG) V_f

T_J= 25°C

Volts

T_J= 175 °C

0.025

0.050

0.200

1.0

MAXIMUM REVERSE CURRENT (I_r@ 600V PIV PER LEG) T_J= 25 °C

T_J= 175 °C

N/A

TOTAL CAPACITIVE CHARGE (V_R=600V I_F=4A di/dt=500A/μs T_J=25°C) Q_Cper leg

MAXIMUM JUNCTION CAPACITANCE (V_r=5V) per leg

C_T

220

• 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 •

• World Wide Web - http://www.sensitron.com • E-mail Address - sales@sensitron.com •

12 3

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与SHD626031_09相关器件

型号	品牌	获取价格	描述	数据表
SHD626031D	SENSITRON	获取价格	HERMETIC SILICON CARBIDE RECTIFIER
SHD626031N	SENSITRON	获取价格	HERMETIC SILICON CARBIDE RECTIFIER
SHD626031P	SENSITRON	获取价格	HERMETIC SILICON CARBIDE RECTIFIER
SHD626051	SENSITRON	获取价格	HERMETIC SILICON CARBIDE RECTIFIER
SHD626051_1	SENSITRON	获取价格	HERMETIC SILICON CARBIDE RECTIFIER
SHD626051_10	SENSITRON	获取价格	HERMETIC SILICON CARBIDE RECTIFIER
SHD626051D	SENSITRON	获取价格	HERMETIC SILICON CARBIDE RECTIFIER
SHD626051D-G	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon Carbide, TO-257AA, ROHS COM
SHD626051-G	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon Carbide, TO-257AA, ROHS COM
SHD626051N	SENSITRON	获取价格	HERMETIC SILICON CARBIDE RECTIFIER

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