Datasheet > SHD620112_09

SHD620112_09

更新时间： 2024-09-23 09:26:35

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SENSITRON		/
页数	文件大小	规格书
3页	52K
描述
HERMETIC SILICON CARBIDE RECTIFIER

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中文翻译

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数据手册

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SHD620112_09 数据手册

SHD620112

SHD620112P

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA, PROVISIONAL DATA ONLY

DATA SHEET 4179, REV. B

HERMETIC SILICON CARBIDE RECTIFIER

DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC

HERMETIC LCC-5 PACKAGE

FEATURES:

•

NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR

SCREENED VERSIONS ARE AVAILABLE

MAXIMUM RATINGS

RATING

ALL RATINGS ARE @ T_C= 25 °C UNLESS OTHERWISE SPECIFIED.

SYMBOL

MAX.

1200

UNITS

Volts

PEAK INVERSE VOLTAGE

PIV

I_O

MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T_C= 65 ^OC, for

Single Package)

Amps

MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T_C= 65 ^OC, for

Dual Package)

I_O

Amps

MAXIMUM REPETITIVE FORWARD SURGE CURRENT

(t = 8.3ms, Sine) T_C= 25 ^OC

I_FRM

MAXIMUM NON-REPETITIVE FORWARD SURGE CURREN

I_FSM

250

(t = 10μs, pulse) T_C= 25 ^OC

MAXIMUM POWER DISSIPATION, T_C= 25 ^OC

MAXIMUM THERMAL RESISTANCE, Junction to Case

MAXIMUM OPERATING TEMPERATURE RANGE

P_d

°C/W

°C

1.8

R_θ_JC

Top

-55 to

+200

MAXIMUM STORAGE TEMPERATURE RANGE

Tstg

-55 to

+200

°C

* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device

above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC

TYP

MAX.

UNITS

1.6

2.5

1.8

3.0

MAXIMUM FORWARD VOLTAGE DROP (I_f= 10A) V_f

T_J= 25 °C

T_J= 175 °C

T_J= 25 °C

T_J=175 °C

C_T

Volts

0.01

0.02

0.20

1.00

MAXIMUM REVERSE CURRENT (1200V PIV) I_r

MAXIMUM JUNCTION CAPACITANCE (V_r=400V)

N/A

TOTAL CAPACITIVE CHARGE (V_R=1200V I_F=10A di/dt=500A/μs T_J=25°C) Q_C

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