SHD620031
SHD620031P
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4283, REV. A
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 600-VOLT, 8 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC
LCC-5 PACKAGE
FEATURES:
•
•
•
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
AVAILABLE SCREENED TO ANY REQUIRED LEVEL
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL
MAX.
600
8
UNITS
Volts
PEAK INVERSE VOLTAGE
PIV
IO
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ TC = 65 OC, for
Dual Package)
Amps
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ TC = 65 OC, for
Single Package)
IO
4
Amps
Amps
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine) per leg, TC = 25 OC
IFRM
20
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
IFSM
110
(t = 10μs, Pulse) per leg, TC = 25 OC
MAXIMUM POWER DISSIPATION, TC = 25 OC
Pd
20
W
°C/W
°C
MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL PACKAGE)
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
5.3
RθJC
Top, Tstg
-55 to
+200
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the
packaged device above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only
be performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE DROP, Pulsed (If = 4 A PER LEG)
1.50
2.00
1.85
2.40
Volts
TJ = 25 °C
Vf
TJ = 175 °C
MAXIMUM REVERSE CURRENT (Ir @ 600V PIV PER LEG)
TJ = 25 °C
0.025
0.050
0.200
1.000
mA
Ir
TJ = 175 °C
JUNCTION CAPACITANCE (Vr =5V) per leg
CT
220
10
pF
N/A
nC
TOTAL CAPACITIVE CHARGE (VR=600V IF=4A di/dt=500A/μs TJ=25°C) QC per
leg
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