Datasheet > SHD619532

SHD619532

更新时间： 2024-09-24 18:09:39

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SENSITRON		/
页数	文件大小	规格书
2页	243K
描述
DESCRIPTION: A 1200, Min VOLT, 23 AMP POWER SILICON CARBIDE Nch FET IN AN ISOLATED HERMETIC SMD-1 PACKAGE, AVAILABLE SCREENED TO ANY REQUIRED LEVEL.

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SHD619532 数据手册

SHD619532

SENSITRON

______

SEMICONDUCTOR

DATASHEET 5313, REV. A.1

1200V, 23A Silicon Carbide Power MOSFET



Low Rdson over full temperature range

Low switching losses

Very low capacitances

JANTX / JANS screening options available

Maximum Ratings

PARAMETER

SYMBOL

VALUE

UNIT

Continuous Drain Current

Vgs = 20V, Tc=25⁰C

Tc=100⁰C

Pulsed Drain Current

Tc=25⁰C

Idpulse

Vgs

Ptot

Gate Source Voltage

-10, +25

150

Power Dissipation

Tc=25⁰C

⁰C

Operating Junction Temperature *

-55 to 150

Note: * This is a new product – the max junction temperature is expected to go up to 175⁰C in future.

MOSFET Characteristics (T_j= 25⁰C unless indicated)

PARAMETER

SYMBOL

V_(BR)DSS

V_GS(TH)

I_DSS

MIN

1200

TYP

MAX

UNIT

Drain-Source Breakdown Voltage

Gate Threshold Voltage

I_D= 100uA

V_GS=V_DS, I_D= 1mA

1.7

2.2

Zero Gate Voltage Drain Current

V_GS= 0V, V_DS= 1200V, T_j= 25⁰C

V_GS= 0V, V_DS= 1200V, T_j= 150⁰C

Gate-Source Leakage Current

100

250

µA

V_GS= 20V, V_DS= 0V

I_GSS

250

On-State Resistance

V_GS=20V, I_D= 20A, T_j= 25⁰C

V_GS=20V, I_D= 20A, T_j= 150⁰C

100

160

110

220

R_DS(ON)

mΩ

Transconductance

V_DS= 20V, I_DS= 20A, T_j= 25⁰C

V_DS= 20V, I_DS= 20A, T_j= 125⁰C

g_fs

9.8

8.5

Input Capacitance

V_DD=800V, V_GS=0V, f=1MHz

Ciss

Coss

Crss

R_G

950

6.5

4.6

Output Capacitance

V_DD=800V, V_GS=0V, f=1MHz

Reverse Transfer Capacitance

Internal Gate Resistance

Ω

Thermal Resistance, Junction to Case

R_THJC

1.00

K/W

Phone (631) 586 7600 FAX (631) 242 9798  www.sensitron.com  sales@sensitron.com

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