Datasheet > SHD619212

SHD619212

更新时间： 2025-01-15 18:09:35

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
3页	191K
描述
DESCRIPTION: A 1200 VOLT, 50 AMP, SiC SCHOTTKY RECTIFIER

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SHD619212 数据手册

SHD619212

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 5497, REV. A

HERMETIC SILICON CARBIDE RECTIFIER

DESCRIPTION: A 1200-VOLT, 50 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC

HERMETIC SMD-1 PACKAGE

FEATURES:



NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR

SCREENED VERSIONS ARE AVAILABLE

MAXIMUM RATINGS

RATING

ALL RATINGS ARE @ T_C= 25 C UNLESS OTHERWISE SPECIFIED.

SYMBOL

MAX.

1200

UNITS

Volts

PEAK INVERSE VOLTAGE

PIV

I_O

MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T_C= 65 ^OC

Amps

MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG

(t = 8.3ms, Sine) per leg, T_C= 25 ^OC

I_FRM

120

800

Amps

MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG

I_FSM

(t = 10s, pulse) per leg, T_C= 25 ^OC (information only)

MAXIMUM POWER DISSIPATION, T_C= 25 ^OC

P_d

136

1.1

C/W

C

MAXIMUM THERMAL RESISTANCE, Junction to Case

MAXIMUM OPERATING and STORAGE TEMPERATURE RANGE*

R__JC

Top, Tstg

-55 to +175

* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the

packaged device above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be

performed to 175C.

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC

TYP

MAX.

UNITS

1.8

2.4

2.0

2.9

MAXIMUM FORWARD VOLTAGE DROP (I_f= 50A)

V_F

I_R

T_J= 25 C

T_J= 175 C

T_J= 25 C

T_J= 175 C

T_J= 25 C

T_J=175 C

V_R=0V

Volts

1.4

1.7

1.8

2.2

MAXIMUM FORWARD VOLTAGE DROP (I_f= 25A)

MAXIMUM REVERSE CURRENT (1200V PIV)

JUNCTION CAPACITANCE

0.1

0.3

0.5

1.0

3380

230

---

V_R=400V

TOTAL CAPACITIVE CHARGE

Q_CV_R=800V

250

Phone (631) 586 7600 FAX (631) 242 9798  www.sensitron.com  sales@sensitron.com  Page 1

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