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SHD374651 PDF预览

SHD374651

更新时间: 2024-11-28 20:47:47
品牌 Logo 应用领域
SENSITRON 二极管
页数 文件大小 规格书
2页 31K
描述
Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon, HERMETIC SEALED, SHD-3HP, 2 PIN

SHD374651 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:S-XXSO-N2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.84应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:S-XXSO-N2
最大非重复峰值正向电流:300 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:50 A封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:2 µs
表面贴装:YES端子形式:NO LEAD
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SHD374651 数据手册

 浏览型号SHD374651的Datasheet PDF文件第2页 
SENSITRON  
SEMICONDUCTOR  
SHD374651  
TECHNICAL DATA  
DATA SHEET 5160, REV. -  
LOW DROP SILICON RECTIFIER  
DESCRIPTION: 200V 50A Hermetic low drop rectifier in a SHD-3 HP package.  
Features:  
Designed for Battery Cell Bypass application  
Low package inductance  
High Surge Capacity  
Available with SX or SXV screening  
Maximum Ratings:  
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.  
Characteristics  
Peak Inverse Voltage  
Max. Average Forward Current  
Max. Peak One Cycle Non-  
Repetitive Surge Current  
Symbol  
VRWM  
IF(AV)  
Condition  
Max.  
200  
50  
Units  
-
-
V
A
A
IFSM  
8.3 ms, half Sine wave  
300  
°C/W  
Maximum Thermal Resistance  
1.0  
RθJC  
Max. Junction Temperature  
Max. Storage Temperature  
TJ  
T
stg  
-
-
-65 to +175  
-65 to +175  
°C  
°
C  
Electrical Characteristics:  
Characteristics  
Max. Forward Voltage Drop  
Symbol  
VF1  
VF2  
VF3  
VF4  
VF5  
VF6  
VF7  
VF8  
Condition  
@ 5A, Pulse, TJ = 25 °C  
@ 10A, Pulse, TJ = 25 °C  
@ 25A, Pulse, TJ = 25 °C  
@ 50A, Pulse, TJ = 25 °C  
@ 100A, Pulse, TJ = 25 °C  
@ 5A, Pulse, TJ = -55 °C  
@ 10A, Pulse, TJ = -55 °C  
@ 25A, Pulse, TJ = -55 °C  
@ 50A, Pulse, TJ = -55 °C  
@ 5A, Pulse, TJ = 125 °C  
@ 10A, Pulse, TJ = 125 °C  
@ 25A, Pulse, TJ = 125°C  
@ 50A, Pulse, TJ = 125 °C  
@VR = 200V, Pulse,  
Max.  
0.850  
0.875  
0.915  
0.965  
1.025  
0.940  
0.965  
1.040  
1.090  
0.715  
0.750  
0.815  
0.865  
10  
Units  
V
V
V
V
V
V
V
V
V
V
V
V
V
μA  
VF9  
VF10  
VF11  
VF12  
VF13  
IR1  
Max. Reverse Current  
TJ = 25 °C  
IR2  
CT  
@VR = 200V, Pulse,  
TJ = 125 °C  
@VR = 10V, TC = 25 °C  
fSIG = 1MHz,  
0.5  
mA  
pF  
Max. Junction Capacitance  
Max. Reverse Recovery Time  
400  
VSIG = 100mV (p-p)  
tRR  
IF = 0.5A, IR = 1A, IRR = 0.25A, TJ  
2
µs  
= 25 °C  
© 2010 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 •  
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com •  

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