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SHD314914SS PDF预览

SHD314914SS

更新时间: 2024-11-21 18:17:03
品牌 Logo 应用领域
SENSITRON 功效瞄准线二极管
页数 文件大小 规格书
3页 172K
描述
Rectifier Diode,

SHD314914SS 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.67其他特性:LOW POWER LOSS
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.12 VJESD-30 代码:S-XXSO-N2
最大非重复峰值正向电流:720 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:60 A封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:SMALL OUTLINE
参考标准:MIL-19500最大重复峰值反向电压:300 V
最大反向电流:30 µA最大反向恢复时间:0.06 µs
表面贴装:YES端子形式:NO LEAD
端子位置:UNSPECIFIEDBase Number Matches:1

SHD314914SS 数据手册

 浏览型号SHD314914SS的Datasheet PDF文件第2页浏览型号SHD314914SS的Datasheet PDF文件第3页 
SHD314914  
SHD314914B  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 5580 REV. -  
HERMETIC ULTRA FAST SOFT RECOVERY RECTIFIER  
Features:  
Low forward voltage drop  
Low power loss, high efficiency  
Very high surge capacity  
Soft reverse recovery at low and high temperature  
Trr guaranteed lower than 50 nsec  
Electrically / mechanically stable during and after packaging  
Maximum Ratings:  
Characteristics  
Peak Inverse Voltage  
Max. Average Forward  
Current  
Symbol  
VRWM  
IF(AV)  
Condition  
-
50% duty cycle, rectangular wave  
Max.  
300  
60  
Units  
V
A
form, TC = 65 C  
Max. Peak One Cycle Non-  
Repetitive Surge Current  
Thermal Impedance  
Max. Junction Temperature  
IFSM  
8.3 msec, sine pulse  
720  
A
ZTH  
TJ  
Tstg  
0.5  
TC = 25 C  
C / W  
C  
C  
-
-
- 65 to + 150  
- 65 to + 150  
Max. Storage Temperature  
Electrical Characteristics:  
Characteristics  
Symbol  
Condition  
@ 20A, Pulse, TJ = 25 C  
@ 60A, Pulse, TJ = 25 C  
Typ.  
0.85  
1.02  
Max.  
0.93  
1.12  
Units  
V
Max. Forward Voltage Drop  
VF1  
VF2  
-
-
0.82  
1.05  
V
@ 20A, Pulse, TJ = 125 C  
@ 60A, Pulse, TJ = 125 C  
IR1  
IR2  
tRR  
2
-
45  
51  
30  
300  
55  
60  
-
@VR = 300V, Pulse, TJ = 25 C  
@VR = 300V, Pulse, TJ = 125 C  
IF = 0.5A; IR = 1.0A, IRM = 0.25A  
IF=20A, di/dt =100A/μs, VR =100V  
A  
A  
nsec  
Max. Reverse Current  
Reverse Recovery Time  
TJ = 25 C  
Max. Junction Capacitance  
CT  
400  
pF  
@VR = 10V, TC = 25 C  
fSIG = 1MHz,  
ISIG = 100mV (p-p)  
©2018 Sensitron Semiconductor (631) 586 7600 FAX (631) 242 9798 www.sensitron.com sales@sensitron.com  

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