Datasheet > SHD219505

SHD219505

更新时间： 2024-09-17 18:09:23

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
2页	81K
描述
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SHD219505 数据手册

SHD219505

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 5575, REV -

HERMETIC POWER MOSFET

N-CHANNEL

FEATURES:

•

500 Volt, 0.4 Ohm, 12.0A MOSFET

Low R_{DS (on)}

Equivalent to IRF450 Series

MAXIMUM RATINGS

ALL RATINGS ARE AT T_C= 25C UNLESS OTHERWISE SPECIFIED.

RATING

SYMBOL

V_GS

MIN.

-55

TYP.

MAX.

20

7.75

+150

150

UNITS

Volts

Amps

C

GATE TO SOURCE VOLTAGE

ON-STATE DRAIN CURRENT

OPERATING AND STORAGE TEMPERATURE

TOTAL DEVICE DISSIPATION @ T_C= 25C

THERMAL RESISTANCE, JUNCTION TO CASE

I_D

@ T_C= 25C

@ T_C= 100C

T_OP/T_STG

P_D

R_thJC

Watts

0.83

C/W

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNITS

DRAIN TO SOURCE BREAKDOWN VOLTAGE

BV_DSS

500

Volts

V_GS= 0V, I_D= 1.0mA

STATIC DRAIN TO SOURCE ON STATE RESISTANCE

V_GS= 10V, I_D= 7.75A

R_DS(ON)

0.43



V_GS= 10V, I_D= 12A

GATE THRESHOLD VOLTAGE V_DS= V_GS, I_D= 0.25mA

ZERO GATE VOLTAGE DRAIN CURRENT

V_DS= Max. Rating, V_GS= 0V

0.50

V_GS(th)

I_DSS

2.0

4.0

Volts

A

250

100

-100

240

220

180

120

V_DS= Max. Rating, V_GS= 0V, T_J= 125C

GATE TO SOURCE LEAKAGE FORWARD

GATE TO SOURCE LEAKAGE REVERSE

TURN ON DELAY TIME

RISE TIME

V_GS= 20V

V_GS= -20V

V_DD= 250V,

I_D= 12A,

I_GSS

t_d(ON)

t_r

t_d(OFF)

t_f

190

170

130

nsec

TURN OFF DELAY TIME

FALL TIME

R_G= 2.35

TOTAL GATE CHARGE

GATE TO SOURCE CHARGE

I_D= 12A,

V_GS= 10V,

Q_g

Q_gs

Q_gd

V_SD

GATE TO DRAIN CHARGE

DIODE FORWARD VOLTAGE

V_DS=0.5xMax. Rating

T_C= 25C, I_S= 12A,

V_GS= 0V

1.7

Volts

Q_RR

REVERSE RECOVERY CHARGE

T_J= 25C,

I_F= 12A,

C

di/dt = 100A/sec, V_DD= 50V

t_rr

1600

REVERSE RECOVERY TIME

T_J= 25C,

nsec

I_F= 12A,

di/dt = 100A/sec, V_DD= 50V

V_GS= 0 V

INPUT CAPACITANCE

C_iss

C_oss

C_rss

2700

600

240

OUTPUT CAPACITANCE

REVERSE TRANSFER CAPACITANCE

V_DS= 25 V

f = 1.0MHz

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