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SHD126168D PDF预览

SHD126168D

更新时间: 2024-11-11 04:51:55
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SENSITRON /
页数 文件大小 规格书
3页 81K
描述
SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 100ⅹC Operating Temperature

SHD126168D 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-257AA
包装说明:S-XSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.51
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS应用:EFFICIENCY
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-257AA
JESD-30 代码:S-XSFM-P3最大非重复峰值正向电流:75 A
元件数量:2相数:1
端子数量:3最高工作温度:100 °C
最低工作温度:-65 °C最大输出电流:7.5 A
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified表面贴装:NO
技术:SCHOTTKY端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED

SHD126168D 数据手册

 浏览型号SHD126168D的Datasheet PDF文件第2页浏览型号SHD126168D的Datasheet PDF文件第3页 
SHD126168  
SHD126168D  
SHD126168N  
SHD126168P  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 4779, REV. A  
SILICON SCHOTTKY RECTIFIER  
Ultra Low Reverse Leakage  
100•C Operating Temperature  
Applications:  
œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode  
Features:  
œ
Ultra low Reverse Leakage Current  
œ
œ
œ
œ
œ
œ
Soft Reverse Recovery at Low and High Temperature  
Very Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Capacity  
Guard Ring for Enhanced Durability and Long Term Reliability  
Guaranteed Reverse Avalanche Characteristics  
Maximum Ratings:  
Characteristics  
Peak Inverse Voltage  
Max. Average Forward  
Current  
Max. Average Forward  
Current  
Symbol  
VRWM  
IF(AV)  
Condition  
-
Max.  
15  
7.5  
Units  
V
A
50% duty cycle, rectangular  
wave form (Single/Doubler)  
50% duty cycle, rectangular  
wave form (Common  
Cathode/Common Anode)  
8.3 ms, half Sine wave  
IF(AV)  
15  
75  
A
A
Max. Peak One Cycle Non-  
Repetitive Surge Current  
Max. Junction Temperature  
Max. Storage Temperature  
Thermal Resistance(single)  
Thermal Resistance(Common  
Cathode,Common, Anode  
Doubler)  
IFSM  
TJ  
Tstg  
-
-
-
-
-65 to +100  
-65 to +100  
1.36  
•C  
•C  
•C/W  
•C/W  
R
JC  
2.71  
R
JC  
Electrical Characteristics:  
Characteristics  
Max. Forward Voltage Drop  
Symbol  
VF1  
Condition  
Max.  
0.46  
0.42  
3.5  
Units  
V
V
@ 7.5A, Pulse, TJ = 25 •C  
@ 7.5A, Pulse, TJ = 125 •C  
@VR = 15V, Pulse,  
TJ = 25 •C  
VF2  
IR1  
Max. Reverse Current  
mA  
IR2  
CT  
@VR = 15V, Pulse,  
TJ = 125 •C  
@VR = 5V, TC = 25 •C  
fSIG = 1MHz,  
170  
600  
mA  
pF  
Max. Junction Capacitance  
VSIG = 50mV (p-p)  
œ 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 œ  
œ World Wide Web - http://www.sensitron.com œ E-Mail Address - sales@sensitron.com œ  

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