Datasheet > SHD126012N

SHD126012N

更新时间： 2024-09-23 04:51:55

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SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 150∑C Operating Temperature

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SHD126012N 数据手册

SHD126012

SHD126012P

SHD126012N

SHD126012D

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATASHEET 4746, REV. A

SILICON SCHOTTKY RECTIFIER

Ultra Low Reverse Leakage

150°C Operating Temperature

Applications:

· Switching Power Supply · Converters · Free-Wheeling Diodes · Polarity Protection Diode

Features:

Ultra low Reverse Leakage Current

Soft Reverse Recovery at Low and High Temperature

Very Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Capacity

Guard Ring for Enhanced Durability and Long Term Reliability

Guaranteed Reverse Avalanche Characteristics

Maximum Ratings:

Characteristics

Peak Inverse Voltage

Max. Average Forward Current

Symbol

V_RWM

I_F(AV)

Condition

Maximum DC Output Current

(@ T_C=100 ^OC) (Single,

Doubler)

Max.

3.0

Units

Max. Average Forward Current

I_F(AV)

Maximum DC Output Current

(@ T_C=100 ^OC) (Common

Cathode, Common Anode)

8.3 ms, half Sine wave

6.0

Max. Peak One Cycle Non-

Repetitive Surge Current

Maximun Thermal Resistence

(Single)

Maximun Thermal Resistence

(Common Cathode, Common

Anode, Doubler)

I_FSM

R_qJC

6.35

3.17

°C/W

Max. Junction Temperature

Max. Storage Temperature

T_J

T_stg

-65 to +150

°C

Electrical Characteristics Per Leg:

Characteristics

Max. Forward Voltage Drop

Symbol

Condition

Max.

0.66

0.61

0.3

Units

V_F1

V_F2

I_R1

@ 3 A, Pulse, T_J= 25 °C

@ 3 A, Pulse, T_J= 125 °C

@V_R= 45 V, Pulse,

T_J= 25 °C

Max. Reverse Current

I_R2

C_T

@V_R= 45 V, Pulse,

T_J= 125 °C

Max. Junction Capacitance

160

@V_R= 5V, T_C= 25 °C

f_SIG= 1MHz,

V_SIG= 50mV (p-p)

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