SHD125446
SHD125446P
SHD125446N
SHD125446D
SENSITRON
______
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 956, REV. B
HERMETIC POWER SCHOTTKY RECTIFIER
Very Low Forward Voltage Drop
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
•
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Reverse Leakage Current
Low Power Loss, High Efficiency
High Surge Capacity
•
•
•
•
•
•
Guard Ring for Enhanced Durability and Long Term Reliability
Add a “C” after the SHD for ceramic seals (SHDC125446)
Maximum Ratings:
Characteristics
Symbol
VRWM
IF(AV)
Condition
-
50% duty cycle, rectangular
wave form
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave
(per leg)
TJ = 25 °C, IAS = 0.75 A,
L = 40mH
AS decay linearly to 0 in 1 μs
ƒ limited by TJ max VA=1.5VR
Max.
200
30
Units
V
A
Peak Inverse Voltage
Max. Average Forward Current
Common Cathode / Anode
Max. Average Forward Current
Single / Doubler
Max. Peak One Cycle Surge
Current Non-Repetitive per leg
Non-Repetitive Avalanche
Energy per leg
IF(AV)
IFSM
EAS
IAR
15
200
16
A
A
mJ
A
Repetitive Avalanche Current
per leg
0.75
I
Thermal Resistance (per leg)
Max. Junction Temperature
Max. Storage Temperature
-
-
-
0.94
-65 to +200
-65 to +175
RθJC
TJ
Tstg
°C/W
°C
°C
Electrical Characteristics:
Characteristics
Symbol
VF1
Condition
@ 30A, Pulse, TJ = 25 °C
@ 30A, Pulse, TJ = 125 °C
@VR = 200V, Pulse,
TJ = 25 °C
Max.
1.09
0.93
0.7
Units
V
V
Max. Forward Voltage Drop
(per leg)
Max. Reverse Current (per leg)
VF2
IR1
mA
IR2
CT
@VR = 200V, Pulse,
TJ = 125 °C
16
mA
pF
Max. Junction Capacitance
(per leg)
600
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
Max. Reverse Recovery Time
trr
IF = 0.5 A, IR = 1.0 A,
50
nsec
IRM = 0.25 A, TJ = 25 °C
©2008 Sensitron Semiconductor • 221 West Industry Court • Deer Park, NY 11729-4681 •
• Phone (631) 586-7600 • Fax (631) 242-9798 • www.sensitron.com • sales@sensitron.com •