Datasheet > SHD120136_11

SHD120136_11

更新时间： 2024-09-21 09:26:47

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描述
SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200C Operating Temperature

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SHD120136_11 数据手册

SENSITRON

SEMICONDUCTOR

SHD120136

TECHNICAL DATA

DATA SHEET 848, REV. B

SCHOTTKY RECTIFIER

Ultra Low Reverse Leakage

200 C Operating Temperature

Applications:

Switching Power Supply

Converters

Free-Wheeling Diodes

Polarity Protection Diode

Features:

Ultra low Reverse Leakage Current

Soft Reverse Recovery at Low and High Temperature

Very Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Capacity

Guard Ring for Enhanced Durability and Long Term Reliability

Guaranteed Reverse Avalanche Characteristics

Maximum Ratings:

Characteristics

Symbol

V_RWM

I_F(AV)

Condition

Max.

200

7.5

Units

Peak Inverse Voltage

Max. Average Forward

Current

Max. Peak One Cycle Non-

Repetitive Surge Current

Non-Repetitive Avalanche

Energy

50% duty cycle, rectangular

wave form

I_FSM

E_AS

I_AR

8.3 ms, half Sine wave ⁽¹⁾

140

7.7

0.4

T_J= 25 C, I_AS= 0.23A,

L = 130 mH

I_ASdecay linearly to 0 in 1 s

Repetitive Avalanche Current

limited by T_Jmax V_A=1.5V_R

Max. Thermal Resistance

Max. Junction Temperature

Max. Storage Temperature

5.06

-65 to +200

T_J

T_stg

Electrical Characteristics:

Characteristics

Max. Forward Voltage Drop

Symbol

V_F1

Condition

@ 7.5A, Pulse, T_J= 25 C

@ 7.5A, Pulse, T_J= 125 C

@V_R= 200V, Pulse,

T_J= 25 C

Max.

0.98

0.82

0.05

Units

V_F2

I_R1

Max. Reverse Current

I_R2

C_T

@V_R= 200V, Pulse,

T_J= 125 C

@V_R= 5V, T_C= 25 C

f_SIG= 1MHz,

V_SIG= 50mV (p-p)

I_F= 0.5A, I_R= 1.0A,

I_RM= 0.25 A, T_J= 25 C

0.5

Max. Junction Capacitance

Max. Reverse Recovery Time

150

t_rr

nsec

2000 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681

PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com

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