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SHD114436A PDF预览

SHD114436A

更新时间: 2024-11-19 04:51:59
品牌 Logo 应用领域
SENSITRON /
页数 文件大小 规格书
3页 64K
描述
POWER SCHOTTKY RECTIFIER LOW REVERSE LEAKAGE

SHD114436A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:S-PSSO-G1
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.82其他特性:LOW POWER LOSS, HIGH RELIABILITY, FREE WHEELING DIODE
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:S-PSSO-G1
最大非重复峰值正向电流:570 A元件数量:1
相数:1端子数量:1
最高工作温度:200 °C最低工作温度:-65 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SHD114436A 数据手册

 浏览型号SHD114436A的Datasheet PDF文件第2页浏览型号SHD114436A的Datasheet PDF文件第3页 
SHD114436  
SHD114436A  
SHD114436B  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 4512, REV. -  
POWER SCHOTTKY RECTIFIER  
Low Reverse Leakage  
Applications:  
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode  
Features:  
Ultra Low Reverse Leakage Current  
Soft Reverse Recovery at Low and High Temperature  
Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Capacity  
Guard Ring for Enhanced Durability and Long Term Reliability  
Guaranteed Reverse Avalanche Characteristics  
Maximum Ratings:  
Characteristics  
Symbol  
VRWM  
IF(AV)  
Condition  
-
50% duty cycle, rectangular  
wave form  
Max.  
200  
30  
Units  
V
A
Peak Inverse Voltage  
Max. Average Forward  
Current  
Max. Peak One Cycle Non-  
Repetitive Surge Current  
Non-Repetitive Avalanche  
Energy  
Repetitive Avalanche  
Current  
IFSM  
EAS  
IAR  
8.3 ms, half Sine wave  
(per leg)  
TJ = 25 °C, IAS = 1.3 A,  
L = 40mH (per leg)  
IAS decay linearly to 0 in 1 µs  
ƒ limited by TJ max VA=1.5VR  
570  
27  
A
mJ  
A
1.3  
Thermal Resistance  
Max. Junction Temperature  
Max. Storage Temperature  
RthJC  
TJ  
Tstg  
Per Package  
0.50  
-65 to +200  
-65 to +200  
°C/W  
°C  
°C  
-
-
Electrical Characteristics:  
Characteristics  
Symbol  
Condition  
Max.  
Units  
Max. Forward Voltage Drop  
VF1  
0.92  
V
@ 30A, Pulse, TJ = 25 °C  
(per leg) measured at the leads  
VF2  
IR1  
IR2  
CT  
0.76  
0.030  
2.0  
V
@ 30A, Pulse, TJ = 125 °C  
(per leg) measured at the leads  
@VR = 200V, Pulse,  
TJ = 25 °C (per leg)  
@VR = 200V, Pulse,  
Max. Reverse Current  
mA  
mA  
pF  
TJ = 125 °C (per leg)  
Max. Junction Capacitance  
600  
@VR = 5 V, TC = 25 °C  
fSIG = 1 MHz,  
VSIG = 50mV (p-p) (per leg)  
Due to the nature of the 200V Schottky devices, some degradation in trr performance at high temperatures should  
be expected, unlike conventional lower voltage Schottkys.  
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  

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